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MSC2712YT1

Onsemi

MSC2712YT1 by Onsemi

The Onsemi MSC2712YT1 is a NPN BJT transistor with 120 min hFE, 50 MHz fT, and 150 °C max operating temp. Ideal for amplifier applications due to its 0.2W power dissipation, 0.1A max collector current, and small outline package style.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 607,683 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

607,683

-

$0.030

$0.025

$0.023

DigiKey

USA . 607,683 parts In-Stock

1+ parts

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607,683

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Farnell

UK . 607,683 parts In-Stock

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Verical

USA . 607,683 parts In-Stock

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607,683

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,042 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

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2,042

$0.024

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Vyrian

USA . 1,217 parts In-Stock

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$0.025

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1,217

$0.025

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,151 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,151

$0.022

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Corohmni

South Africa . 376 parts In-Stock

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$0.025

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376

$0.025

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Component Stockers USA

USA . 434,173 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

434,173

$0.030

$0.020

$0.020

$0.020

Continental Prestige Electronics

USA . 607,683 parts In-Stock

1+ parts

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$0.020

607,683

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$0.020

SupplyDigital Components

Austria . 5,593 parts In-Stock

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Kulean Microsystems

USA . 4,886 parts In-Stock

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4,886

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TANS Electronics

Latvia . 2,807 parts In-Stock

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2,807

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Problanco Electronics

Mexico . 1,089 parts In-Stock

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1,089

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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890

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Overview

Unlock the power of high-quality amplification with the MSC2712YT1 from Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors for a wide range of applications. The NPN configuration and small outline package make it ideal for amplifier circuits, providing reliable performance and durability. With a maximum operating temperature of 150 °C and a nominal transition frequency of 50 MHz, this transistor offers exceptional value and efficiency to customers looking for a compact and powerful solution. Experience enhanced signal processing capabilities with the MSC2712YT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliable performance.

Polarity or Channel Type: NPN

Commonly used in amplifiers and other electronic circuits, making it versatile and widely compatible.

Configuration: SINGLE

Simplified design for easier integration into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Allows for easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low power applications, ensuring energy efficiency.

Package Shape: RECTANGULAR

Compact shape for space-saving and efficient PCB layout.

Terminal Form: GULL WING

Facilitates easy soldering and testing during assembly.

No. of Terminals: 3

Simple connection setup for integration into circuits.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage requirements in various applications.

Maximum Collector Current (IC): 0.1 A

Sufficient current capability for many small signal applications.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MSC2712YT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MSC2712YT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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