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MPSA43G

Onsemi

MPSA43G by Onsemi

MPSA43G by Onsemi is a NPN BJT with 200V VCEO, 50MHz fT, and 1.5W Ptot. Ideal for low-power applications, it features hFE of 40 and operates up to 150°C. Commonly used in signal amplification due to its small signal capabilities in through-hole package.

Median Price

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Lifecycle Status

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4

In-Stock Inventory

1k+

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Chip Stock

USA . 43,000 parts In-Stock

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Vyrian

USA . 9,591 parts In-Stock

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Digiode

USA . 2,237 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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AZTECH Wire

Italy . 465 parts In-Stock

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$19.135

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465

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Ampacity Inc.

Singapore . 1,535 parts In-Stock

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$35.050

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Continental Prestige Electronics

USA . 4,909 parts In-Stock

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Kulean Microsystems

USA . 4,744 parts In-Stock

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SupplyDigital Components

Austria . 4,675 parts In-Stock

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Argo Parts USA

USA . 3,268 parts In-Stock

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Problanco Electronics

Mexico . 1,662 parts In-Stock

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Corphita

USA . 1,079 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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TANS Electronics

Latvia . 254 parts In-Stock

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Overview

Enhance your electronic projects with the MPSA43G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed to deliver exceptional performance and reliability. Onsemi is renowned for its cutting-edge technology and innovation in the semiconductor industry, ensuring that you receive a product that meets the highest standards of excellence. Whether you're working on amplifiers, oscillators, or switching circuits, this NPN transistor offers unparalleled value with its high power dissipation, robust construction, and wide operating temperature range. Trust the MPSA43G to elevate your designs and bring your ideas to life with precision and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SINGLE

Single configuration simplifies the circuit design and ensures easy integration into electronic circuits.

Package Shape: ROUND

Round package shape allows for easy mounting and handling during assembly, making it user-friendly.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connections and facilitate easy soldering on circuit boards.

Maximum Power Dissipation (Abs): 1.5 W

With a high power dissipation rating, this transistor can handle large amounts of power without overheating, ensuring reliability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers compact size and efficient thermal management, suitable for space-constrained applications.

Minimum DC Current Gain (hFE): 40

A high DC current gain ensures stable and reliable amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to withstand elevated temperatures, ensuring reliable operation in challenging environments.

Maximum Collector-Emitter Voltage: 200 V

With a high breakdown voltage rating, the transistor can handle high voltages, making it suitable for voltage amplification applications.

Transistor Element Material: SILICON

Silicon material offers high performance, low noise, and excellent reliability, making it a preferred choice for transistor fabrication.

Maximum Collector Current (IC): 0.05 A

Capable of handling high collector currents, this transistor is suitable for power amplification and switching applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections over time.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and assembly, making it easier to integrate the transistor into electronic circuits.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, the transistor can withstand solder reflow processes during assembly without damage.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making the transistor suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA43G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA43G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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