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MPSA42RLRFG

Onsemi

MPSA42RLRFG by Onsemi

MPSA42RLRFG by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 1.5W Ptot. Ideal for low-power applications, it has hFE of 40 and fT of 50MHz. Its through-hole package makes it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,101 parts In-Stock

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Digiode

USA . 139 parts In-Stock

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AZTECH Wire

Italy . 1,094 parts In-Stock

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$11.960

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QUARKTWIN TECHNOLOGY LTD

USA . 20,509 parts In-Stock

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TANS Electronics

Latvia . 7,142 parts In-Stock

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Kulean Microsystems

USA . 5,316 parts In-Stock

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Problanco Electronics

Mexico . 2,845 parts In-Stock

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SupplyDigital Components

Austria . 1,070 parts In-Stock

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UHIMA Technologies

Türkiye . 696 parts In-Stock

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Corphita

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Corohmni

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Overview

Unleash the power of innovation with the MPSA42RLRFG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is ideal for a wide range of applications. Its high power dissipation, low DC current gain, and superior collector-emitter voltage make it a versatile choice for your electronic projects. Trust in Onsemi to deliver excellence, and experience the benefits of cutting-edge technology with the MPSA42RLRFG.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN

Commonly used and versatile type of transistor for amplification and switching applications.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to work with.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling moderate power levels, suitable for various applications.

Minimum DC Current Gain (hFE): 40

Provides good amplification capability for signal processing.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 300 V

Capable of handling higher voltage levels, suitable for a wide range of circuits.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels, suitable for various circuit designs.

Terminal Finish: TIN SILVER COPPER

Provides good electrical conductivity and corrosion resistance for reliable connections.

Nominal Transition Frequency (fT): 50 MHz

Capable of switching at high frequencies, suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42RLRFG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42RLRFG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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