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MPSA42RLRAG

Onsemi

MPSA42RLRAG by Onsemi

MPSA42RLRAG by Onsemi is a NPN BJT with max. power dissipation of 1.5W, hFE of 40, and VCE of 300V. Ideal for applications requiring high voltage switching in through-hole configurations at up to 150°C operating temperature.

Median Price

$0.274

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 10 parts In-Stock

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$0.127

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Mobius Materials

USA . 1,594 parts In-Stock

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$0.420

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$0.340

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1,594

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Chip Stock

USA . 54,000 parts In-Stock

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Vyrian

USA . 11,789 parts In-Stock

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Pegasus Components GmbH

Germany . 2,000 parts In-Stock

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Digiode

USA . 637 parts In-Stock

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Corohmni

South Africa . 386 parts In-Stock

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$0.124

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386

$0.124

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Netroflash

USA . 50 parts In-Stock

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$0.127

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$0.124

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50

$0.127

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Aztec Data Supply Inc.

USA . 3,966 parts In-Stock

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$0.434

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$0.434

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Semicontronic

India . 1,262 parts In-Stock

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$6.050

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$5.899

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$5.868

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1,262

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Ampacity Inc.

Singapore . 589 parts In-Stock

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$13.050

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AZTECH Wire

Italy . 711 parts In-Stock

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$13.890

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Component Stockers USA

USA . 591 parts In-Stock

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$99.990

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Perfect Parts

USA . 31,557 parts In-Stock

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GreenTree Electronics

Israel . 14,800 parts In-Stock

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Problanco Electronics

Mexico . 7,895 parts In-Stock

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Kulean Microsystems

USA . 4,053 parts In-Stock

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Argo Parts USA

USA . 2,620 parts In-Stock

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SupplyDigital Components

Austria . 2,508 parts In-Stock

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Continental Prestige Electronics

USA . 2,474 parts In-Stock

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TANS Electronics

Latvia . 1,984 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 555 parts In-Stock

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Overview

Unlock the power of Onsemi with the MPSA42RLRAG small signal bipolar junction transistor. Manufactured by industry leader Onsemi, this NPN transistor offers high quality and reliability for a wide range of applications. With a maximum collector-emitter voltage of 300V and a maximum operating temperature of 150°C, this transistor delivers exceptional performance and efficiency. Whether you're designing amplifiers, switching circuits, or voltage regulators, the MPSA42RLRAG provides the perfect solution for your electronic projects. Trust Onsemi for superior technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification applications, making this transistor versatile.

Configuration: SINGLE

Simplified design with a single transistor configuration.

Package Shape: ROUND

Compact and space-saving design for easy integration into circuit boards.

Maximum Power Dissipation (Abs): 1.5 W

Ability to handle up to 1.5 watts of power dissipation, suitable for low to moderate power applications.

Minimum DC Current Gain (hFE): 40

A minimum DC current gain of 40 ensures reliable amplification in various circuit designs.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 300 V

With a maximum voltage rating of 300V, this transistor can be used in a wide range of voltage applications.

Maximum Collector Current (IC): 0.5 A

A collector current rating of 0.5A allows for adequate current handling capabilities.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency of 50 MHz enables fast switching and response times in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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