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MPSA93RLRMG

Onsemi

MPSA93RLRMG by Onsemi

MPSA93RLRMG by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for small signal applications in electronics due to its hFE of 25, fT of 50MHz, and operating temperature up to 150 °C. Package style is cylindrical with through-hole terminals.

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3

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1k+

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Chip Stock

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AZTECH Wire

Italy . 950 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 17,057 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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TANS Electronics

Latvia . 5,282 parts In-Stock

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Kulean Microsystems

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Corphita

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UHIMA Technologies

Türkiye . 513 parts In-Stock

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Overview

Upgrade your electronics with the high-quality MPSA93RLRMG Small Signal Bipolar Junction Transistor from Onsemi. Designed for efficiency and reliability, this PNP transistor offers a seamless performance in various applications, ensuring optimal functionality and durability. With a maximum collector-emitter voltage of 200V and a minimum DC current gain of 25, this transistor is perfect for amplification tasks and signal processing. Trust Onsemi's reputation for excellence and elevate your projects with the value and benefits that the MPSA93RLRMG transistor provides.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protects the transistor from external elements, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity or channel type allows for easy integration into PNP transistor circuits, providing flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making it easier to implement in various electronics projects.

Package Shape: ROUND

The round package shape offers easy mounting and installation, making it ideal for applications where space is limited.

Maximum Power Dissipation (Abs): 1.5 W

With a high maximum power dissipation of 1.5 W, this transistor can handle a significant amount of power, making it suitable for applications requiring high power output.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides robustness and ease of handling, allowing for efficient soldering and installation.

Minimum DC Current Gain (hFE): 25

The minimum DC current gain of 25 ensures accurate signal amplification, making this transistor reliable for various signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 200 V

The high maximum collector-emitter voltage of 200 V allows for operation in high-voltage circuits, making this transistor versatile for a wide range of applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures reliability and stability in performance, making it a durable choice for long-term use.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads, making it suitable for various electronic circuits.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper offers excellent conductivity and corrosion resistance, ensuring reliable connections and longevity in operation.

Terminal Position: BOTTOM

The bottom terminal position allows for easy PCB mounting and soldering, making installation hassle-free and efficient.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring robust connections and reliability.

Nominal Transition Frequency (fT): 50 MHz

The high nominal transition frequency of 50 MHz indicates fast switching speeds and high-frequency performance, making this transistor ideal for applications requiring rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA93RLRMG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA93RLRMG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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