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MPSA93G

Onsemi

MPSA93G by Onsemi

MPSA93G by Onsemi is a PNP BJT with 200V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for low-power applications, it has a min hFE of 25 and operates up to 150 °C. Commonly used in signal amplification circuits due to its high transition frequency of 50MHz.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

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$0.030

1k+ parts

$0.025

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$0.023

1,500

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 1,987 parts In-Stock

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$0.024

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1,987

$0.024

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Chip Stock

USA . 42,000 parts In-Stock

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42,000

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Vyrian

USA . 4,861 parts In-Stock

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4,861

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Distributors (Availability)

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Corphita

USA . 208 parts In-Stock

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$0.022

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208

$0.022

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Corohmni

South Africa . 195 parts In-Stock

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$0.025

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195

$0.025

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Component Stockers USA

USA . 3,387 parts In-Stock

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$0.030

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$0.020

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$0.020

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3,387

$0.030

$0.020

$0.020

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AZTECH Wire

Italy . 515 parts In-Stock

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$13.490

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515

$13.490

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Kepictronics

USA . 9,500 parts In-Stock

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9,500

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Kulean Microsystems

USA . 8,018 parts In-Stock

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TANS Electronics

Latvia . 7,160 parts In-Stock

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SupplyDigital Components

Austria . 4,586 parts In-Stock

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4,586

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UHIMA Technologies

Türkiye . 764 parts In-Stock

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764

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Problanco Electronics

Mexico . 99 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality MPSA93G Small Signal Bipolar Junction Transistor by Onsemi. Manufactured by a trusted industry leader, this PNP transistor offers reliable performance and versatility for a wide range of applications. With a maximum collector-emitter voltage of 200V and a maximum operating temperature of 150 °C, this transistor delivers exceptional value and efficiency. Whether you're designing audio amplifiers, signal processing circuits, or voltage regulators, the MPSA93G provides the power and precision you need to bring your ideas to life. Experience the benefits of Onsemi's superior technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier and switching circuits, offering flexibility in circuit design.

Configuration: SINGLE

SINGLE configuration makes it easy to integrate into circuits without the need for complex setups.

Package Shape: ROUND

The round package shape allows for easy mounting and handling of the transistor.

Maximum Power Dissipation: 1.5 W

With a high power dissipation capability, this transistor can handle higher loads and operate efficiently.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature makes this transistor suitable for a wide range of operating conditions.

Maximum Collector-Emitter Voltage: 200 V

With a high collector-emitter voltage rating, this transistor can be used in high voltage applications.

Minimum DC Current Gain: 25

The minimum DC current gain ensures consistent and reliable performance in amplification circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice in electronic circuits.

Nominal Transition Frequency: 50 MHz

The high nominal transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA93G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA93G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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