Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NSBA143EDXV6T1
Onsemi
NSBA143EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max VCE of 50V and IC of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
15
R-PDSO-F6
e3
1
2
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
PNP
.5 W
Not Qualified
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
30
SWITCHING
SILICON
NSBA143ZDXV6T1
NSBA143ZDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. This small outline transistor in plastic/epoxy package is surface mountable, making it suitable for compact electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 0.1
80
NSBC113EDXV6T1
NSBC113EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications due to its small outline package style and max collector current of 0.1A. Features flat terminals, tin finish, and peak reflow temp of 260°C for surface mount usage.
3
NPN
NSBC113EPDXV6T1
NSBC113EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max. collector-emitter voltage of 50V, and max. collector current of 0.1A. This transistor comes in a small outline package shape suitable for surface mount assembly.
NPN AND PNP
NSBC114EDXV6T1
NSBC114EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 35. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package style, flat terminals, and peak reflow temp of 260 °C.
35
NSBC114EPDXV6T1
NSBC114EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistor, max collector-emitter voltage of 50V, and max power dissipation of 0.5W. This surface-mount transistor has a package style of small outline and terminal finish in tin.
NSBC114TDXV6T1
NSBC114TDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements, built-in resistor, and hFE of 160. It has a max collector-emitter voltage of 50V and max current of 0.1A. Ideal for switching applications due to its small outline package and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR
160
NSBC123EDXV6T1
NSBC123EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a max. power dissipation of 0.5W and max. collector current of 0.1A in a small outline package shape suitable for surface mount technology.
8
NSBC123JDXV6T1
NSBC123JDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for switching applications. This small outline transistor in plastic/epoxy package is surface mountable with 6 terminals for efficient use.
BUILT IN BIAS RESISTOR RATIO 21.36
NSBC123JPDXV6T1
NSBC123JPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors in a small outline package, supporting a max collector-emitter voltage of 50V and max collector current of 0.1A. Suitable for surface mount designs requiring high DC current gain (hFE) above 80.
BUILT IN BIAS RESISTOR RATIO IS 21.36
NSBC124EDXV6T1
NSBC124EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 60. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon material.
60
NSBC124EPDXV6T1
NSBC124EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and max collector-emitter voltage of 50V. This transistor is surface mountable in a small outline package, suitable for various electronic circuits requiring low to medium power switching capabilities.
150 Cel
NSBC124XDXV6T1
NSBC124XDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications in small outline packages with flat terminals for surface mount technology.
BUILT IN BIAS RESISTOR RATIO 2.14
NSBC143EDXV6T1
NSBC143EDXV6T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style and can handle up to 0.1A collector current.
NSBC143ZDXV6T1
NSBC143ZDXV6T1 by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages, it features a peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO 10
NSBC144EPDXV6T1
NSBC144EPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications in compact designs due to its small outline package shape and surface-mount capability.
MMBT6521LT1
MMBT6521LT1 by Onsemi is a NPN BJT transistor with 300 min hFE, 0.3W power dissipation, and 25V collector-emitter voltage. Ideal for amplifier applications, it features a small outline package style and Gull Wing terminals for surface mount assembly. Operating at up to 150 °C, it offers reliable performance in various electronic circuits.
25 V
SINGLE
300
TO-236AB
R-PDSO-G3
e0
235
.3 W
Other Transistors
Tin/Lead (Sn/Pb)
GULL WING
AMPLIFIER
2SC4081RT1
2SC4081RT1 by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 50V and max collector current of 0.1A. With a min DC current gain of 180, it's ideal for amplifier applications. This surface mount transistor has a small outline package style and operates up to 150 °C.
180
.2 W
MSB92ASWT1
MSB92ASWT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 300V, max collector current of 0.5A, and min DC current gain of 25. With a package style of small outline and surface mount capability, it operates at up to 150 °C.
.5 A
300 V
25
.15 W
50 MHz
NSB1706DMW5T1
NSB1706DMW5T1 by Onsemi is a NPN BJT with 2 elements, built-in resistor, and hFE of 80. It's ideal for switching applications with max VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly at peak reflow temp of 235 °C.
BUILT IN BIAS RESISTOR RATIO IS 10
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
.385 W
EMC3DXV5T5
EMC3DXV5T5 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements in a cascaded configuration with built-in resistors, ideal for switching applications. With a max collector-emitter voltage of 50V and a power dissipation of 0.5W, it is suitable for surface mount designs requiring compact components.
BUILT-IN BIAS RESISTOR RATIO IS 1
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F5
PZT3906T1
PZT3906T1 by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for applications requiring small outline package style, such as signal amplification in electronic circuits due to its high transition frequency of 250MHz and low turn-on time of 70ns.
COLLECTOR
.2 A
40 V
TO-261AA
R-PDSO-G4
4
250 MHz
300 ns
70 ns
MPSA12RLRA
MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.
.3 A
20 V
DARLINGTON
20000
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
NO
THROUGH-HOLE
BOTTOM
100 MHz
MPSA12RLRP
MPSA12RLRP by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or switching circuits due to its SILICON transistor element material and THROUGH-HOLE terminal form.
.625 W
TIN LEAD
MMJT9410T1
MMJT9410T1 by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small outline applications requiring high DC current gain and low collector current.
.01 A
30 V
3 W
72 MHz
BC327-016
BC327-016 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.8A, and min DC current gain of 100. With a package style of cylindrical and max power dissipation of 0.625W, it operates at up to 150 °C.
.8 A
45 V
100
260 MHz
BC327-040
BC327-040 by Onsemi is a PNP BJT transistor with hFE of 250, IC of 0.8A, and fT of 260MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and collector-emitter voltage of 45V. This through-hole transistor has a cylindrical package shape made from silicon material.
250
EMG2DXV5T1
NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .338 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80;
.338 W
EMG5DXV5T1
The Onsemi EMG5DXV5T1 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.
BUILT-IN BIAS RESISTOR RATIO IS 4.7
EMZ1DXV6T1
The Onsemi EMZ1DXV6T1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max collector-emitter voltage of 60V.
60 V
SEPARATE, 2 ELEMENTS
120
180 MHz
EMZ1DXV6T5
The Onsemi EMZ1DXV6T5 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max VCE of 60V and IC of 0.1A.
EMD5DXV6T1
EMD5DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features separate elements with built-in resistor for switching applications. With a max VCEsat of 0.25V, it operates in temperatures ranging from -55 to 150 °C, making it suitable for various electronic devices.
BUILT-IN BIAS RESISTOR RATIO IS 2.13
-55 Cel
.25 V
2N5087G
2N5087G by Onsemi is a PNP BJT transistor with max. power dissipation of 1.5W, hFE of 250, and max. collector-emitter voltage of 50V. Ideal for amplifier applications due to its high transition frequency of 40MHz and max. operating temp. of 150°C in a cylindrical package style.
.05 A
e1
1.5 W
TIN SILVER COPPER
40 MHz
2N3904RLRMG
2N3904RLRMG by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for low-power applications like amplification circuits due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A.
300 MHz
250 ns
MBT3904DW2T1
MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.
R-PDSO-G6
NSBC123JDXV6T5
NSBC123JDXV6T5 by Onsemi is a NPN BJT with 2 elements, built-in resistor, hFE of 80. It has max VCE of 50V, IC of 0.1A, and Pdiss of 0.5W. Ideal for switching applications due to its small outline package and silicon element material.
NUS2401SNT1G
NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.
BUILT IN BIAS RESISTORS
COMPLEX
150
.35 W
MATTE TIN
MSB710-RT1G
PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
40
2N5401RLRAG
2N5401RLRAG by Onsemi is a PNP BJT with max. VCE of 150V, IC of 0.6A, and hFE of 50. Ideal for amplifier applications due to its max. power dissipation of 1.5W and fT of 100MHz in a cylindrical package with through-hole terminals.
.6 A
150 V
50
Tin/Silver/Copper (Sn/Ag/Cu)
2N5550RLRPG
2N5550RLRPG by Onsemi is a NPN BJT transistor with 140V VCEO, 0.6A IC, and 100MHz fT. Ideal for amplifier applications due to its 1.5W Ptot, hFE of 20, and operating temp up to 150 °C. Features through-hole terminals in a cylindrical package shape.
140 V
20
2N6520RLRAG
2N6520RLRAG by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 350V, max. power dissipation of 1.5W, and min. DC current gain of 15. Ideal for switching applications due to its high transition frequency of 40MHz and low turn-on time of 200ns. Package style is cylindrical with through-hole terminals for easy mounting.
350 V
3500 ns
200 ns
2SA1774G
2SA1774G by Onsemi is a PNP BJT transistor with hFE of 120, ideal for amplifier applications. With a max voltage of 50V and max current of 0.1A, it operates at up to 150°C. Featuring a transition frequency of 140MHz, this surface-mount device in a small outline package is suitable for compact electronic designs.
140 MHz
BC368ZL1G
BC368ZL1G by Onsemi is a NPN BJT transistor with 1A IC, 20V VCE, and 65MHz fT. Ideal for amplifier applications due to its high hFE of 85 and max power dissipation of 1.5W. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
1 A
85
65 MHz
BC548BZL1G
BC548BZL1G by Onsemi is a NPN BJT transistor with hFE of 200, VCEO of 30V, and IC of 0.1A. Ideal for amplifier applications, it has a max power dissipation of 1.5W and operates up to 150°C. The package style is cylindrical with through-hole terminals in a plastic/epoxy body.
200
DTC144WM3T5G
DTC144WM3T5G by Onsemi is a NPN BJT transistor with built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. With a small outline package style and operating temperature up to 150 °C, it is suitable for surface mount designs requiring compact components.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
SINGLE WITH BUILT-IN RESISTOR
R-PDSO-F3
.6 W
Matte Tin (Sn) - annealed
EMT1DXV6T5
EMT1DXV6T5 by Onsemi is a PNP BJT with 2 elements, hFE of 120, VCE of 60V, and fT of 140MHz. Ideal for amplifier applications, it features a small outline package with 6 terminals and can handle a max collector current of 0.1A.
EMX2DXV6T5
The Onsemi EMX2DXV6T5 is a NPN BJT transistor with 2 elements, hFE of 120, and VCE of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.
NSTB1002DXV5T1
NSTB1002DXV5T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features cascaded configuration with 2 elements, built-in resistor, and a max collector-emitter voltage of 50V. Ideal for switching applications, this transistor has a min hFE of 30 and peak reflow temperature of 260 °C.
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