Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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EMF5XV6T5G
Onsemi
The Onsemi EMF5XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE) in electronic circuits.
BUILT IN BIAS RESISTOR RATIO 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
e3
1
2
6
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
NPN AND PNP
.5 W
Not Qualified
Other Transistors
YES
MATTE TIN
FLAT
DUAL
30
SILICON
MMJT9410T1G
MMJT9410T1G by Onsemi is a NPN BJT with 3W power dissipation, 30V max collector-emitter voltage, and 72MHz transition frequency. Ideal for small signal applications in electronics due to its high DC current gain and low collector current. Suitable for surface mount designs requiring compact packaging and efficient heat dissipation.
COLLECTOR
.01 A
30 V
SINGLE
60
R-PDSO-G3
3
NPN
3 W
TIN
GULL WING
72 MHz
NSBC114EPDXV6T5G
NSBC114EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and can operate at up to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTOR RATIO IS 1
35
BIP General Purpose Small Signal
SWITCHING
NSBC114YPDXV6T5G
NSBC114YPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 80, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.
BUILT IN BIAS RESISTOR RATIO IS 4.7
NSBC124EPDXV6T5G
NSBC124EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistors, max power dissipation of 0.5W, and can operate b/w -55 to 150 °C. Suitable for surface mount designs in various electronic circuits.
BUILT IN BIAS RESISTANCE RATIO IS 1
-55 Cel
NSBC144EPDXV6T5G
NSBC144EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max power dissipation of 0.5W, and can operate at temperatures up to 150 °C. This transistor has a collector-emitter voltage of 50V and a collector current of 0.1A, making it suitable for various electronic circuits requiring low-power amplification or switching functions in compact designs.
NSVDTC144TM3T5G
NSVDTC144TM3T5G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with matte tin finish is ideal for automotive electronics meeting AEC-Q101 standard.
BUILT-IN BIAS RESISTOR
SINGLE WITH BUILT-IN RESISTOR
120
R-PDSO-F3
NOT SPECIFIED
.6 W
AEC-Q101
Matte Tin (Sn) - annealed
NSBA143EDP6T5G
NSBA143EDP6T5G by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max collector-emitter voltage of 50V and max current of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.
15
PNP
.408 W
NSBC143EPDP6T5G
NSBC143EPDP6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max power dissipation of 0.408W, hFE of 15, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.
BUILT IN BIAS RESISTOR RATIO 1.0
NSM21356DW6T1G
NSM21356DW6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a hFE of 80, Vce of 50V, and Ic of 0.1A. Ideal for switching applications, it comes in a rectangular package with Gull Wing terminals for surface mount assembly.
R-PDSO-G6
NSBC144WDP6T5G
NSBC144WDP6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.408W, hFE of 80, and max collector-emitter voltage of 50V. Ideal for switching applications, this small outline package with matte tin finish operates up to 150 °C.
BUILT IN BIAS RESISTOR RATIO IS 0.47
NSM11156DW6T1G
NSM11156DW6T1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface-mount device in a small outline package is designed for high-speed operations in various electronic circuits.
BUILT IN BIAS RESISTOR RATIO IS 1.0
NSM46211DW6T1G
NSM46211DW6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a hFE of 200, Vce of 65V, and Ic of 0.1A. Ideal for switching applications, this surface-mount device comes in a small outline package with Gull Wing terminals.
65 V
200
BC859BLT1
BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.
220
TO-236AB
e0
235
.3 W
Tin/Lead (Sn/Pb)
100 MHz
BCX71JLT1
BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.
45 V
100
.35 W
800 ns
150 ns
DTA115EET1
DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.
BUILT-IN BIAS RESISTOR RATIO IS 1
TIN LEAD
DTC115EET1
DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.
BIP General Purpose Small Signals
DTC144TT1
DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.
BUILT IN BIAS RESISTOR
160
.338 W
DTC144WET1
DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
UMA4NT1
UMA4NT1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and common emitter configuration. It has a max collector-emitter voltage of 50V, max current of 0.1A, and min DC current gain of 160 (hFE). Ideal for switching applications in small outline packages with gull wing terminals.
COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-G5
5
.15 W
UMC5NT1
UMC5NT1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors, offering a min hFE of 80. With a max IC of 0.1A and VCE of 50V, this transistor is designed for surface mount in small outline packages.
CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
MMBT4126LT1
MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.
.2 A
25 V
.225 W
250 MHz
PN2222ARLRA
PN2222ARLRA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz). Package style: cylindrical, terminals: 3 through-hole bottom tin lead.
.6 A
40 V
75
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
.625 W
NO
THROUGH-HOLE
BOTTOM
300 MHz
285 ns
35 ns
PN2222ARLRP
PN2222ARLRP by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, max. collector current of 0.6A, and min. DC current gain of 75. It is used for switching applications due to its single configuration and cylindrical package style with through-hole terminals. Operating at up to 150°C, it offers a transition frequency of 300MHz for efficient performance in various electronic circuits.
MUN5237T1
MUN5237T1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable for efficient assembly processes.
BUILT IN BIAS RESISTOR RATIO 0.47
.31 W
BCX56-10R1
BCX56-10R1 by Onsemi is a NPN BJT transistor with 80V VCEO, 1A IC, and 130MHz fT. It is used in amplifier applications due to its 1.56W power dissipation, small outline package style, and high DC current gain of 25 hFE. The transistor's flat terminal form and single terminal position make it suitable for surface mount configurations.
1 A
80 V
25
R-PSSO-F3
1.56 W
AMPLIFIER
130 MHz
MMJT350T1
MMJT350T1 by Onsemi is a PNP BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 2.75W, hFE of 20, and can handle up to 300V collector-emitter voltage. The package style is small outline, making it suitable for surface mount designs in various electronic circuits.
.5 A
300 V
20
TO-261AA
R-PDSO-G4
4
2.75 W
NSTB60BDW1T1
NSTB60BDW1T1 by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.15A, and transition frequency of 140MHz. Ideal for applications requiring high DC current gain and low power dissipation in compact designs.
BUILT IN BIAS RESISTOR RATIO IS 2.13
.15 A
.25 W
140 MHz
BC488BRL1
BC488BRL1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 60V and max. collector current of 1A. It has a min DC current gain of 15, making it suitable for switching applications due to its high transition frequency of 150MHz. The transistor comes in a cylindrical package with through-hole terminals, ideal for various electronic circuits requiring low-power amplification or signal processing.
EUROPEAN PART NUMBER
60 V
150 MHz
BC639-16ZL1
BC639-16ZL1 by Onsemi is a NPN BJT with max. power dissipation of 0.8W, hFE of 100, and max. collector-emitter voltage of 80V. Ideal for applications requiring a single configuration transistor in through-hole package style, suitable for temperatures up to 150 °C and operating at a nominal transition frequency of 200MHz.
.8 W
200 MHz
MSC3930-BT1
MSC3930-BT1 by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style for surface mount assembly.
.03 A
20 V
70
HN1B01FDW1T1
HN1B01FDW1T1 by Onsemi is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max power dissipation of 0.38 W and is commonly used as an amplifier in various applications. This surface mount transistor has a rectangular package shape with gull wing terminals, making it suitable for compact designs.
SEPARATE, 2 ELEMENTS
.38 W
NSL12AWT1
NSL12AWT1 by Onsemi is a PNP BJT transistor with 6 terminals, max power dissipation of 0.65W, and max collector current of 2A. Ideal for switching applications with a min DC current gain of 100, operating up to 150 °C.
2 A
12 V
.65 W
MMBT4401WT1
MMBT4401WT1 by Onsemi is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.75V, hFE of 40, and can handle a max IC of 0.6A. With a small outline package style, it operates b/w -55 to 150 °C and has a transition frequency of 250 MHz suitable for various electronic circuits.
6.5 pF
40
255 ns
.75 V
MMBTA06WT1
MMBTA06WT1 by Onsemi is a NPN BJT transistor with 100 min hFE, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 0.5A of current. With a package style of small outline, it is designed for surface mount assembly in electronic circuits.
MMBTA56WT1
MMBTA56WT1 by Onsemi is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V, max collector current of 0.5A, and min DC current gain of 100. This surface-mount transistor operates up to 150 °C and has a transition frequency of 50MHz.
50 MHz
NUS2401SNT1
NUS2401SNT1 by Onsemi is a Small Signal BJT with NPN/PNP polarity, 50V VCE, and 0.2A IC. It's used for switching applications in complex configurations. The package is surface mountable with Gull Wing terminals and a max power dissipation of 0.35W.
BUILT IN BIAS RESISTORS
COMPLEX
150
BC847BPDXV6T1
BC847BPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates up to 150 °C, with max collector-emitter voltage of 45V and transition frequency of 100MHz.
BC858CDXV6T5
BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.
420
NST3904DXV6T5
The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.
250 ns
70 ns
NST3946DXV6T1
NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.
NST3946DXV6T5
NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.
NSBA113EDXV6T1
NSBA113EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style, flat terminals, and can handle up to 0.1A collector current.
NSBA114TDXV6T1
NSBA114TDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.5W, hFE of 160, and VCE of 50V. Ideal for switching applications, this surface-mount device comes in a small outline package with dual terminals.
NSBA114YDXV6T1
NSBA114YDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. Ideal for switching applications with max IC of 0.1A and VCE of 50V. Features small outline package style, flat terminals, and surface mount capability.
BUILT IN BIAS RESISTOR RATIO IS 0.21
NSBA123EDXV6T1
NSBA123EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of min. 8. It's used for switching applications with max. VCE of 50V and IC of 0.1A. The transistor comes in a small outline package with flat terminals, suitable for surface mount assembly at peak reflow temp of 260 °C within 30s.
8
NSBA123JDXV6T1
NSBA123JDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. Ideal for switching applications with max VCE of 50V and IC of 0.1A. Features small outline package, flat terminals, and peak reflow temp of 260 °C.
BUILT IN BIAS RESISTOR RATIO IS 0.047
NSBA124EDXV6T1
NSBA124EDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 60. It has a max collector-emitter voltage of 50V and collector current of 0.1A, suitable for switching applications. This surface-mount device in a small outline package is designed for high power dissipation up to 0.5W.
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