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DTA115EET1

Onsemi

DTA115EET1 by Onsemi

DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,660 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

5,660

-

$0.053

$0.044

$0.039

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 695 parts In-Stock

1+ parts

$0.041

100+ parts

-

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695

$0.041

-

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Chip Stock

USA . 53,000 parts In-Stock

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53,000

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Elcom Components

USA . 21,000 parts In-Stock

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21,000

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Vyrian

USA . 8,207 parts In-Stock

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8,207

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PC Components Company LLC

USA . 1,496 parts In-Stock

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1,496

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Bristol Electronics

USA . 1,496 parts In-Stock

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1,496

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,503 parts In-Stock

1+ parts

$0.037

100+ parts

-

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5,503

$0.037

-

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Corphita

USA . 1,481 parts In-Stock

1+ parts

$0.039

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-

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1,481

$0.039

-

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Corohmni

South Africa . 142 parts In-Stock

1+ parts

$0.043

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-

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142

$0.043

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Native Components

USA . 974 parts In-Stock

1+ parts

$0.275

100+ parts

-

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$0.264

974

$0.275

-

-

$0.264

Northwest PG Solutions

USA . 878 parts In-Stock

1+ parts

$0.303

100+ parts

-

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$0.267

878

$0.303

-

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$0.267

AZTECH Wire

Italy . 394 parts In-Stock

1+ parts

$18.220

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394

$18.220

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Metaverse IC Inc.

Canada . 36,000 parts In-Stock

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36,000

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RC Electronics

USA . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,533 parts In-Stock

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Kulean Microsystems

USA . 6,209 parts In-Stock

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6,209

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SupplyDigital Components

Austria . 5,784 parts In-Stock

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5,784

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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A-Z Elektronik GmbH

Germany . 4,881 parts In-Stock

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4,881

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Alle Elektronik GmbH

Germany . 3,254 parts In-Stock

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3,254

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Problanco Electronics

Mexico . 2,187 parts In-Stock

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2,187

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TANS Electronics

Latvia . 594 parts In-Stock

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594

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Kepictronics

USA . 508 parts In-Stock

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508

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UHIMA Technologies

Türkiye . 329 parts In-Stock

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329

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Overview

Discover the power of the DTA115EET1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With a built-in resistor and PNP configuration, this transistor offers convenience and efficiency in a compact rectangular package. Designed with precision by Onsemi, known for their reliability and innovation, this product delivers exceptional performance and value. Whether you're looking to enhance your electronic projects or streamline your circuit designs, the DTA115EET1 is the ideal solution for all your needs. Experience the benefits of superior quality and functionality with Onsemi's DTA115EET1 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring long-term reliability and performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP type transistors are required, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing efficient and reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on printed circuit boards, offering convenience during production and assembly processes.

Terminal Form: GULL WING

Facilitates easy soldering and connections during assembly, ensuring a secure and stable connection.

Maximum Power Dissipation (Abs): 0.3 W

Can handle a maximum power dissipation of 0.3W, making it suitable for low to medium power applications.

Minimum DC Current Gain (hFE): 80

Provides a consistent and high DC current gain of 80, ensuring stable and predictable amplification properties.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, it is suitable for applications requiring a lower voltage range.

Transistor Element Material: SILICON

Utilizes silicon as the transistor element material, offering high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, suitable for low current applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures reliable soldering connections, improving the overall durability and longevity of the transistor.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit designs, allowing for versatile integration within different electronic systems.

Peak Reflow Temperature °C: 235

Can withstand peak reflow temperatures up to 235 °C, ensuring compatibility with modern assembly techniques and processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA115EET1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA115EET1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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