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DTC144TT1

Onsemi

DTC144TT1 by Onsemi

DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,980 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

14,980

-

$0.030

$0.025

$0.023

Verical

USA . 14,980 parts In-Stock

1+ parts

-

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-

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14,980

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-

-

-

Distributors (In-Stock)

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Digiode

USA . 469 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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469

$0.024

-

-

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Vyrian

USA . 7,321 parts In-Stock

1+ parts

-

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7,321

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,283 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,283

$0.022

-

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Corohmni

South Africa . 429 parts In-Stock

1+ parts

$0.025

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-

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429

$0.025

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-

-

Native Components

USA . 29 parts In-Stock

1+ parts

$12.080

100+ parts

-

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29

$12.080

-

-

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Northwest PG Solutions

USA . 751 parts In-Stock

1+ parts

$13.288

100+ parts

$11.959

1k+ parts

-

10k+ parts

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751

$13.288

$11.959

-

-

AZTECH Wire

Italy . 90 parts In-Stock

1+ parts

$16.310

100+ parts

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90

$16.310

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Kulean Microsystems

USA . 5,504 parts In-Stock

1+ parts

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5,504

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TANS Electronics

Latvia . 5,327 parts In-Stock

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5,327

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SupplyDigital Components

Austria . 4,990 parts In-Stock

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4,990

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,982 parts In-Stock

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3,982

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UHIMA Technologies

Türkiye . 944 parts In-Stock

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944

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RC Electronics

USA . 300 parts In-Stock

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300

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Overview

Unlock the power of reliable performance with the DTC144TT1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJTs) like no other. This NPN transistor with a built-in resistor is perfect for switching applications, offering unparalleled value and benefits to customers. With its surface mount capability and high DC current gain, the DTC144TT1 provides efficient and effective solutions for a wide range of electronic projects. Trust Onsemi to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Helps to provide insulation and protection for the transistor, making it more durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for various applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space, making it convenient for integration into compact devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such circuits.

Surface Mount: YES

Surface mount design makes it easier to mount and solder the transistor onto the circuit board, improving manufacturability.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on the PCB, enhancing the overall design aesthetics.

Maximum Power Dissipation (Abs): 0.338 W

High power dissipation rating ensures the transistor can handle significant loads without overheating, increasing its reliability in operation.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures efficient signal amplification and switching capabilities, making this transistor suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating makes this transistor suitable for circuits requiring higher voltage operation.

Maximum Collector Current (IC): 0.1 A

Able to handle up to 0.1A of current, making it suitable for low to moderate power applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability, making it easier to assemble the transistor onto the circuit board.

Peak Reflow Temperature °C: 235

High peak reflow temperature allows for reliable soldering during the assembly process, ensuring a strong bond between the transistor and PCB.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC144TT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC144TT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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