Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MUN5237T1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable for efficient assembly processes.
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This material makes the transistor lightweight and durable, making it easy to handle and less likely to get damaged during handling or usage.
NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various applications.
The built-in resistor simplifies circuit design by eliminating the need for an external resistor, saving space and reducing the overall cost of the circuit.
Designed specifically for switching applications, this transistor provides fast switching times and low power dissipation, making it efficient for switching circuits.
Surface mount compatibility allows for easy and efficient PCB assembly, saving time and enabling compact circuit designs.
The rectangular shape provides a standard form factor for easy integration into various PCB layouts and designs.
Gull wing terminals make soldering easier and more reliable, ensuring good electrical connections for optimal performance.
Having three terminals allows for versatile connection options and flexibility in circuit configurations.
With a high maximum power dissipation, this transistor can handle moderate power levels without overheating or getting damaged.
The small outline package style saves space on the PCB, enabling compact and efficient circuit designs.
A high minimum DC current gain ensures consistent and stable amplification performance in various circuit applications.
With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels in circuit applications.
Silicon transistors are known for their reliability, high conductivity, and low leakage current, ensuring long-term performance and stability.
With a maximum collector current of 0.1 A, this transistor can handle moderate current levels, making it suitable for various circuit applications.
Tin/lead terminal finish provides good solderability and ensures reliable electrical connections for optimal performance.
Having dual terminal positions provides flexibility in PCB layout and circuit design, allowing for multiple mounting options.
This specification indicates the maximum time the transistor can be exposed to peak reflow temperature during soldering, ensuring proper soldering without damaging the component.
With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes without compromising its performance.
Small Signal Bipolar Junction Transistors (BJT) MUN5237T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Minimum DC Current Gain (hFE):
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
MUN5237T1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Multiple Devices 30/Jun/2006
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148
Comchip Technology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM317LMX/NOPB
National Semiconductor
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 8; Package Code: SOP; Terminal Form: GULL WING; Maximum Seated Height: 1.75 mm; Nominal Dropout Voltage-1: 3 V;
Synsemi
SMBJ18CA
Yageo
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
LM555CN
Harris Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
LL4148
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Bytesonic Electronics
M39029/56-351
Itt Cannon
CONNECTOR ACCESSORY; MIL Conformity: YES; Terminal Type: WIRE; IEC Conformity: NO; Alternate Contact Sources: ITT CANNON; Associated Military - Specifications: MIL-C-38999;
BSS84-7-F
Diodes Incorporated
Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
Vishay Sprague
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
LL4148-GS08
Telefunken Microelectronics
RECTIFIER DIODE; Surface Mount: YES; JESD-609 Code: e0; No. of Elements: 1; Maximum Operating Temperature: 175 Cel; Maximum Non Repetitive Peak Forward Current: 2 A;
IRLML6401TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum Operating Temperature: -55 Cel; Avalanche Energy Rating (EAS): 33 mJ;
CRCW080510R0FKEA
Vishay Intertechnology
Vishay Intertechnology's CRCW080510R0FKEA is a fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for surface mount applications in automotive electronics due to its AEC-Q200 reference standard and operating voltage of 150 V. Operating temperature range from -55 to 155 °C ensures reliability in various environments.
Yangzhou Yangjie Electronics
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
2N2222A
Microsemi
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
MBRS3200T3G
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
Infinex
MMBT2222A
Weitronic Enterprise
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
BC857BS,115
Nexperia
PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30;
2N2219A
Asi Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC857C,215
NXP Semiconductors
BC857C,215 by NXP Semiconductors is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.65V and a min DC current gain (hFE) of 420. It is commonly used for switching applications due to its surface mount capability and max collector-emitter voltage of 45V.
BCY89
Tt Electronics Plc
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Package Shape: ROUND;
MMBT3906
Nte Electronics
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER;
ULN2003AD
ULN2003AD by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications, it has a max VCE of 50V and comes in a small outline package style suitable for surface mount technology.
SMMBT5401LT1G
SMMBT5401LT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 150V. Ideal for small outline packages, it operates at up to 150°C and has a nominal transition frequency of 100MHz, making it suitable for high-speed applications in automotive electronics.
2N2222AUB
Central Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
JANTX2N2222AUB
Optek Technology
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
MMBT3904
Rectron
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
JANTX2N2222AUA
Crystalonics
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Terminal Form: NO LEAD;
Semiconductor Technology
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
Semicoa
SMBTA06E6327HTSA1
Infineon Technologies
Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
BC847,215
NXP Semiconductors' BC847,215 is a NPN BJT transistor with VCEsat of 0.6V, hFE of 110, and IC of 0.1A. Ideal for switching applications in small outline packages with 3 terminals. Operates at max temp of 150°C and has a transition frequency of 100MHz.
BC857B,215
BC857B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max collector-emitter voltage of 45V, it operates at temperatures up to 150°C.
MMBT2222ALP4-7B
Diodes Inc.'s MMBT2222ALP4-7B is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 300MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150°C max operating temp. Package: PLASTIC/EPOXY CHIP CARRIER with NO LEAD terminals.
BC547BTA
BC547BTA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style.
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MUN5311DW1T1G
MUN5311DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistors, suitable for switching applications. With a max collector-emitter voltage of 50V and max operating temp of 150°C, it's ideal for surface mount designs requiring compactness.
MUN5214T1G
MUN5214T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals operates up to 150°C, making it ideal for surface mount applications.
MUN5211T1G
MUN5211T1G by Onsemi is a NPN BJT with built-in resistor for switching applications. Features include hFE of 35, VCE of 50V, and IC of 0.1A. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs in various electronic circuits.
MUN5211DW1T1G
MUN5211DW1T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with gull wing terminals operates up to 150°C, making it suitable for various electronic devices.
MUN5235DW1T1G
MUN5235DW1T1G by Onsemi is a NPN BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 50V. This small outline package features Gull Wing terminals and built-in resistors for efficient performance.
MUN5233T1G
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10;
MUN5214DW1T1G
MUN5214DW1T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. Ideal for switching applications due to its small outline package style and surface mount capability.
MUN5111T1G
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
MUN5313DW1T1G
MUN5313DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. Ideal for switching applications, it has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80.
MUN5314DW1T1G
MUN5314DW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor, suitable for switching applications. With a max collector-emitter voltage of 50V and max current of 0.1A, it operates at up to 150°C peak reflow temperature.
MUN5235T1G
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
MUN5112T1G
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;
MUN5335DW1T1G
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;
MUN5213DW1T1G
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .385 W; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
MUN5215T1G
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
MUN5114T1G
MUN5114T1G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor operates up to 150°C, making it suitable for various electronic devices.
MUN5312DW1T1G
NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
MUN5113T3G
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .202 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): NOT SPECIFIED;
MUN5112T1
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Terminals: 3;
MUN5114DW1T1
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
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