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DTC144WET1

Onsemi

DTC144WET1 by Onsemi

DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

3,000

-

$0.030

$0.025

$0.023

Distributors (In-Stock)

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Digiode

USA . 953 parts In-Stock

1+ parts

$0.024

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-

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953

$0.024

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Chip Stock

USA . 17,000 parts In-Stock

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17,000

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Vyrian

USA . 8,065 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,619 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,619

$0.022

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Corohmni

South Africa . 70 parts In-Stock

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$0.025

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-

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70

$0.025

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AZTECH Wire

Italy . 1,100 parts In-Stock

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$8.700

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1,100

$8.700

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Perfect Parts

USA . 86,971 parts In-Stock

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86,971

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GreenTree Electronics

Israel . 77,653 parts In-Stock

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Kulean Microsystems

USA . 7,802 parts In-Stock

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TANS Electronics

Latvia . 7,494 parts In-Stock

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Problanco Electronics

Mexico . 5,861 parts In-Stock

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SupplyDigital Components

Austria . 1,525 parts In-Stock

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Northwest PG Solutions

USA . 866 parts In-Stock

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$4.375

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866

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$4.375

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UHIMA Technologies

Türkiye . 539 parts In-Stock

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539

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Native Components

USA . 73 parts In-Stock

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$4.331

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73

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$4.331

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Overview

Elevate your electronic projects with the DTC144WET1 by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers quality and reliability that you can trust. The NPN configuration with a built-in resistor makes it perfect for switching applications. With its compact rectangular package and gull wing terminals, this transistor is easy to install and use. Experience the benefits of the DTC144WET1's high DC current gain and low power dissipation, providing excellent performance and efficiency for your projects. Choose Onsemi for superior products that deliver value and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good insulation and protection for the transistor, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space, making this transistor a convenient choice for applications that require a resistor in the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it suitable for use in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, making this transistor ideal for mass production and automated manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape helps in efficient placement and mounting on the PCB, optimizing space utilization and enhancing the overall compactness of the circuit design.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and reliable connections, ensuring stability and robustness in the assembly process.

No. of Terminals: 3

Three terminals allow for easy integration into circuits and provide flexibility in connection options, making this transistor suitable for various circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, this transistor can handle moderate power levels, making it suitable for low to medium power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enhances thermal performance, making this transistor suitable for compact designs and applications with limited space.

Minimum DC Current Gain (hFE): 80

High DC current gain of 80 ensures reliable amplification of signals, making this transistor suitable for applications where signal amplification is critical.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage levels, providing versatility for different circuit requirements.

Transistor Element Material: SILICON

Silicon material enhances the performance and reliability of the transistor, offering stable operation over a wide temperature range and ensuring long-term functionality.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows for handling moderate current levels, making this transistor suitable for low to medium current applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and corrosion resistance, ensuring reliable connections and long-term stability in various environmental conditions.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options, allowing for easy integration into diverse circuit layouts and configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Maximum time at peak reflow temperature of 30 seconds ensures proper soldering and thermal stability during assembly, contributing to the overall reliability of the transistor.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235 °C ensures effective soldering and thermal bonding during the assembly process, maintaining the integrity and performance of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC144WET1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 2.1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC144WET1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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