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DTC115EET1

Onsemi

DTC115EET1 by Onsemi

DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,878 parts In-Stock

1+ parts

$1.050

100+ parts

$0.079

1k+ parts

$0.058

10k+ parts

-

5,878

$1.050

$0.079

$0.058

-

Rochester

USA . 366,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

366,000

-

$0.053

$0.044

$0.039

Verical

USA . 366,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.066

366,000

-

-

-

$0.066

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,082 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

10k+ parts

-

1,082

$0.041

-

-

-

TEDSS.com

USA . 6,498 parts In-Stock

1+ parts

$0.100

100+ parts

-

1k+ parts

$0.012

10k+ parts

-

6,498

$0.100

-

$0.012

-

Chip Stock

USA . 66,000 parts In-Stock

1+ parts

-

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66,000

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-

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Vyrian

USA . 6,592 parts In-Stock

1+ parts

-

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-

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6,592

-

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 583 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

583

$0.039

-

-

-

Component Stockers USA

USA . 225,522 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.040

10k+ parts

$0.040

225,522

$0.040

$0.040

$0.040

$0.040

Advanced Electronics

New Zealand . 600 parts In-Stock

1+ parts

$1.348

100+ parts

$1.227

1k+ parts

$1.105

10k+ parts

-

600

$1.348

$1.227

$1.105

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Corohmni

South Africa . 120 parts In-Stock

1+ parts

$1.678

100+ parts

-

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-

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120

$1.678

-

-

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AZTECH Wire

Italy . 819 parts In-Stock

1+ parts

$16.240

100+ parts

-

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-

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819

$16.240

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-

-

Native Components

USA . 118 parts In-Stock

1+ parts

$401.132

100+ parts

$393.109

1k+ parts

$389.098

10k+ parts

$385.087

118

$401.132

$393.109

$389.098

$385.087

Northwest PG Solutions

USA . 2,376 parts In-Stock

1+ parts

$441.245

100+ parts

-

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2,376

$441.245

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Continental Prestige Electronics

USA . 366,000 parts In-Stock

1+ parts

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100+ parts

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$0.041

10k+ parts

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366,000

-

-

$0.041

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Perfect Parts

USA . 40,053 parts In-Stock

1+ parts

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100+ parts

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40,053

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Authorized Procurement Solutions

USA . 5,878 parts In-Stock

1+ parts

-

100+ parts

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5,878

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TANS Electronics

Latvia . 5,806 parts In-Stock

1+ parts

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5,806

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-

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Problanco Electronics

Mexico . 5,112 parts In-Stock

1+ parts

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5,112

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SupplyDigital Components

Austria . 3,523 parts In-Stock

1+ parts

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3,523

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Kulean Microsystems

USA . 1,922 parts In-Stock

1+ parts

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1,922

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UHIMA Technologies

Türkiye . 723 parts In-Stock

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723

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Overview

Unlock the potential of your electronic projects with the DTC115EET1 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability. Ideal for switching applications, this NPN transistor with a built-in resistor provides seamless performance. Its compact design, Gull Wing terminals, and high DC current gain ensure easy installation and efficient operation. Trust Onsemi's legacy of excellence and elevate your creations with the DTC115EET1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring a longer lifespan and improved reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good amplification capabilities, making them versatile for various circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space by eliminating the need for an external resistor, making the product more cost-effective and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation, making it ideal for power management and control circuits.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels without overheating, ensuring reliable performance in various applications.

Minimum DC Current Gain (hFE): 80

The high DC current gain of 80 ensures consistent and stable amplification in circuit designs, providing accurate signal control and processing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage of 50 V allows for flexibility in voltage requirements and helps protect the transistor from voltage spikes, enhancing its durability and reliability.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A enables the transistor to handle moderate current levels, making it suitable for applications that require efficient power management and control.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides excellent solderability and conductivity, ensuring secure connections and reliable performance in various operating conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC115EET1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTC115EET1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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