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UMC5NT1

Onsemi

UMC5NT1 by Onsemi

UMC5NT1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors, offering a min hFE of 80. With a max IC of 0.1A and VCE of 50V, this transistor is designed for surface mount in small outline packages.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,950 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

5,950

-

$0.066

$0.055

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,023 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

1,023

$0.051

-

-

-

Zilex Electronics Inc.

Canada . 6,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,000

-

-

-

-

Vyrian

USA . 3,009 parts In-Stock

1+ parts

-

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-

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3,009

-

-

-

-

ABC Electronics Ltd.

UK . 2,585 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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-

2,585

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,285 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

1,285

$0.049

-

-

-

Corohmni

South Africa . 78 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

78

$0.054

-

-

-

AZTECH Wire

Italy . 409 parts In-Stock

1+ parts

$20.230

100+ parts

-

1k+ parts

-

10k+ parts

-

409

$20.230

-

-

-

TANS Electronics

Latvia . 4,201 parts In-Stock

1+ parts

-

100+ parts

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4,201

-

-

-

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SupplyDigital Components

Austria . 3,098 parts In-Stock

1+ parts

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100+ parts

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3,098

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-

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Problanco Electronics

Mexico . 2,528 parts In-Stock

1+ parts

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2,528

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Assy Fe

Spain . 1,500 parts In-Stock

1+ parts

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1,500

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UHIMA Technologies

Türkiye . 231 parts In-Stock

1+ parts

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231

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Kulean Microsystems

USA . 95 parts In-Stock

1+ parts

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95

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Overview

Enhance your electronic projects with the UMC5NT1 Small Signal Bipolar Junction Transistor by Onsemi. Known for their top-notch quality and innovative technology, Onsemi delivers reliable components for a variety of applications. The UMC5NT1 offers cascaded configuration with built-in resistors, making it ideal for switching purposes. With its NPN and PNP polarity types, this transistor provides flexibility in design. Experience the value and benefits of this product, designed for maximum power dissipation and high DC current gain. Upgrade your projects with the UMC5NT1 and see the difference in performance and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials make the package lightweight and cost-effective while providing good protection for the transistor components.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design, catering to different requirements and configurations.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with built-in resistors simplifies circuit design by reducing the need for external components, saving space and cost.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable and efficient performance in controlling electronic circuits.

Surface Mount: YES

Being surface mountable makes it easy to integrate this transistor into compact electronic devices and PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

The rectangular package shape provides a standard form factor for easy mounting and fitting into circuit designs.

Terminal Form: GULL WING

Gull wing terminals enable secure connection and easy soldering onto PCBs, ensuring reliable electrical contact.

Maximum Power Dissipation (Abs): 0.15 W

With a maximum power dissipation of 0.15W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures sufficient amplification in the transistor's operation, improving signal integrity.

Maximum Collector-Emitter Voltage: 50 V

The maximum collector-emitter voltage of 50V allows for reliable operation within a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon material in the transistor element provides high performance, stability, and efficiency, ensuring long-term reliability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit layout and connections, accommodating different PCB designs and configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC5NT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UMC5NT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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