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UMC5NT2

Onsemi

UMC5NT2 by Onsemi

UMC5NT2 by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features 2 elements with built-in resistor, ideal for switching applications. With a max collector-emitter voltage of 50V and max collector current of 0.1A, it's suitable for low-power circuits in compact designs.

Median Price

$0.061

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

39,000

-

$0.066

$0.055

$0.049

DigiKey

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

39,000

-

-

-

$0.060

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.061

39,000

-

-

-

$0.061

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 732 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

732

$0.047

-

-

-

Digiode

USA . 172 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

172

$0.051

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 470 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

-

10k+ parts

-

470

$0.047

-

-

-

Corphita

USA . 321 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

-

321

$0.049

-

-

-

Continental Prestige Electronics

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.047

10k+ parts

-

39,000

-

-

$0.047

-

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

A-Z Elektronik GmbH

Germany . 4,844 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,844

-

-

-

-

Kepictronics

USA . 4,493 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,493

-

-

-

-

Problanco Electronics

Mexico . 2,842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,842

-

-

-

-

TANS Electronics

Latvia . 1,842 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,842

-

-

-

-

Kulean Microsystems

USA . 1,389 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,389

-

-

-

-

Assy Fe

Spain . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,300

-

-

-

-

UHIMA Technologies

Türkiye . 168 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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168

-

-

-

-

SupplyDigital Components

Austria . 72 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

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72

-

-

-

-

Overview

Discover the power of innovation with the UMC5NT2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors designed for switching applications. With a unique cascadable configuration and built-in resistors, this NPN and PNP transistor offers unmatched performance and reliability. Ideal for a wide range of electronic devices, the UMC5NT2 provides customers with a compact, high-efficiency solution that maximizes power dissipation while ensuring seamless operation. Upgrade your projects with Onsemi's cutting-edge technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN AND PNP

Offers flexibility in design and application as both NPN and PNP transistors are available in one package.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for easy integration into circuit designs, simplifying the overall design process.

Transistor Application: SWITCHING

Suited for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Enables easy and quick assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

Compact shape makes it suitable for applications with limited space availability.

No. of Elements: 2

Having 2 elements in one package allows for more functionalities in a single component.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power dissipation levels, suitable for various electronic devices.

Minimum DC Current Gain (hFE): 80

Ensures stable and predictable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Can withstand high voltage levels, providing reliable performance in different applications.

Transistor Element Material: SILICON

Silicon material offers good performance characteristics such as reliability and low leakage.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for a wide range of applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and electrical conductivity for secure connections.

Terminal Position: DUAL

Dual terminal position provides versatility in mounting options, catering to different circuit board layouts.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC5NT2 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UMC5NT2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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