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UMC5NTR

ROHM

UMC5NTR by ROHM

ROHM UMC5NTR is a small signal BJT with NPN and PNP polarity, ideal for switching applications. It features a max VCEsat of 0.3V, hFE of 68, and can handle up to 0.1A collector current. With a package style of small outline and terminal form in gull wing shape, it operates at temperatures up to 150°C.

Median Price

$0.410

Lifecycle Status

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DigiKey

USA . 2,826 parts In-Stock

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$0.410

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$0.159

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$0.105

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$0.076

2,826

$0.410

$0.159

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$0.076

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Legend Electronics Inc.

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ComSIT USA

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Bristol Electronics

USA . 15,988 parts In-Stock

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$0.172

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Dan-Mar Components

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Netsource Technology, Inc.

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Mil-Aero Solutions, Inc.

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ACDS - Activité Composants Distribution Service

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Cyclops Electronics Ltd

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Q Components

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Elcom Components

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Ampacity Inc.

Singapore . 4,520 parts In-Stock

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$0.700

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Overview

Discover the innovative UMC5NTR by ROHM, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With its cascadable configuration and built-in resistors, this NPN/PNP transistor offers convenience and reliability. Ideal for various electronic projects, this surface-mount component boasts a low VCEsat of 0.3V and a high DC current gain of 68, ensuring optimal performance. Trust in ROHM's reputation for excellence and elevate your designs with the UMC5NTR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile use in various circuit designs.

Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

The cascaded configuration with built-in resistor enhances the performance and efficiency of the transistor in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it ideal for use in electronic devices and circuits.

Surface Mount: YES

Surface mount capability offers easy installation and space-saving benefits for compact electronic designs.

Maximum VCEsat: 0.3 V

Low VCEsat value minimizes power loss and improves overall efficiency of the transistor in switching operations.

Package Shape: RECTANGULAR

Rectangular package shape allows for easier integration into circuit boards and electronic devices.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and easy soldering during assembly.

No. of Elements: 2

Having 2 elements allows for increased functionality and flexibility in circuit design.

No. of Terminals: 5

5 terminals provide multiple connection points for enhanced circuit versatility and integration.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation ensures efficient operation and prevents overheating in electronic devices.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for denser electronic configurations.

Minimum DC Current Gain (hFE): 68

High minimum DC current gain ensures stable and reliable amplification in circuit applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range allows for reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating enables the transistor to handle higher voltage applications.

Transistor Element Material: SILICON

Silicon material offers superior electrical properties and reliability for the transistor element.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1 A allows for handling of moderate current loads in circuit applications.

Terminal Finish: MATTE TIN

Matte tin finish provides corrosion resistance and ensures long-lasting solder connections.

Terminal Position: DUAL

Dual terminal position offers flexible mounting options for different circuit configurations.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency enables fast signal switching and responsiveness in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC5NTR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

UMC5NTR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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