Loading...

UMC5NT1G

Onsemi

UMC5NT1G by Onsemi

UMC5NT1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, common base configuration, and built-in resistor. Ideal for switching applications, it has a max VCEsat of 0.25V, operates up to 150 °C, and supports a max collector-emitter voltage of 50V. This surface-mount transistor features a gull wing terminal form in a rectangular package style.

Median Price

$0.260

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 654 parts In-Stock

1+ parts

$0.260

100+ parts

$0.097

1k+ parts

$0.061

10k+ parts

$0.050

654

$0.260

$0.097

$0.061

$0.050

Chip1Stop

Japan . 16 parts In-Stock

1+ parts

$0.562

100+ parts

-

1k+ parts

-

10k+ parts

-

16

$0.562

-

-

-

Verical

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.028

3,000

-

-

-

$0.028

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,239 parts In-Stock

1+ parts

$0.162

100+ parts

-

1k+ parts

-

10k+ parts

-

2,239

$0.162

-

-

-

Vyrian

USA . 399 parts In-Stock

1+ parts

$0.170

100+ parts

-

1k+ parts

-

10k+ parts

-

399

$0.170

-

-

-

Flip Electronics

USA . 21,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,000

-

-

-

-

ComSIT Distribution GmbH

Germany . 9,715 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,715

-

-

-

-

NexGen Digital

USA . 4,091 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,091

-

-

-

-

Bristol Electronics

USA . 1,157 parts In-Stock

1+ parts

-

100+ parts

$0.150

1k+ parts

$0.045

10k+ parts

-

1,157

-

$0.150

$0.045

-

Microfarads

USA . 762 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

762

-

-

-

-

ECAB

Sweden . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,949 parts In-Stock

1+ parts

$0.153

100+ parts

-

1k+ parts

-

10k+ parts

-

1,949

$0.153

-

-

-

Corohmni

South Africa . 423 parts In-Stock

1+ parts

$0.170

100+ parts

-

1k+ parts

-

10k+ parts

-

423

$0.170

-

-

-

Component Stockers USA

USA . 25,152 parts In-Stock

1+ parts

$0.280

100+ parts

$0.120

1k+ parts

$0.060

10k+ parts

$0.030

25,152

$0.280

$0.120

$0.060

$0.030

Perfect Parts

USA . 107,667 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

107,667

-

-

-

-

Kepictronics

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51,000

-

-

-

-

TANS Electronics

Latvia . 5,173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,173

-

-

-

-

Kulean Microsystems

USA . 5,140 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,140

-

-

-

-

SupplyDigital Components

Austria . 4,121 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,121

-

-

-

-

Assy Fe

Spain . 1,900 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,900

-

-

-

-

Problanco Electronics

Mexico . 1,840 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,840

-

-

-

-

UHIMA Technologies

Türkiye . 970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

970

-

-

-

-

GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Unlock the power of cutting-edge technology with the UMC5NT1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors that are versatile and reliable for a wide range of applications. With NPN and PNP configurations and built-in resistors, this transistor is perfect for switching applications. Experience seamless performance and efficiency with a maximum VCEsat of 0.25V and a minimum DC current gain of 80. Trust Onsemi to provide superior products that offer exceptional value and benefits to customers looking for high-quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for flexibility in circuit design and compatibility with different configurations.

Configuration: COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can help in reducing external components, making the product more space-efficient.

Transistor Application: SWITCHING

With a specified application for switching, this transistor is optimized for fast switching speeds and efficient operation in such scenarios.

Surface Mount: YES

Being surface mountable makes installation and PCB design easier, especially for compact and modern electronic devices.

Maximum VCEsat: 0.25 V

Low VCEsat minimizes power loss and improves efficiency in switching applications, enhancing overall performance.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and placement on PCBs, contributing to efficient design and space utilization.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical connection and easy soldering during assembly, ensuring reliable operation.

No. of Elements: 2

Having 2 elements provides dual functionality or redundancy, offering more flexibility and options in circuit design.

No. of Terminals: 5

Having more terminals allows for additional connections and configurations, expanding the versatility of the transistor.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation helps in preventing overheating and ensures the reliability and longevity of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact electronic devices or densely populated circuits.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient amplification and signal processing, enhancing the performance of the transistor.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in various environmental conditions, increasing the versatility of the device.

Maximum Collector-Emitter Voltage: 50 V

Having a high collector-emitter voltage rating enables the transistor to handle higher voltages, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, offering good performance characteristics and durability.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures reliable operation even in extreme cold conditions, making it versatile for various environments.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, suitable for many circuit applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides a reliable and durable connection, while the annealing process further enhances the solderability and conductivity of the terminal.

Terminal Position: DUAL

Having dual terminal positions allows for multiple mounting options and configurations, enhancing the flexibility of the transistor in circuit design.

Maximum Time At Peak Reflow Temperature (s): 40

The specified time at peak reflow temperature ensures proper soldering and assembly, maintaining the integrity and reliability of the transistor.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for efficient soldering and assembly processes, ensuring a strong and reliable connection.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC5NT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

UMC5NT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6