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UMC5NT2G

Onsemi

UMC5NT2G by Onsemi

UMC5NT2G by Onsemi is a Small Signal BJT with NPN and PNP polarity. It features common base configuration, 2 elements with built-in resistor, and is ideal for switching applications. With a max VCEsat of 0.25V, it operates at temperatures ranging from -65 to 150°C, making it suitable for various electronic designs.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 165 parts In-Stock

1+ parts

$0.048

100+ parts

$0.008

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-

10k+ parts

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165

$0.048

$0.008

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DigiKey

USA . 2,990 parts In-Stock

1+ parts

$0.250

100+ parts

$0.094

1k+ parts

$0.061

10k+ parts

$0.042

2,990

$0.250

$0.094

$0.061

$0.042

Mouser Electronics

USA . 2,950 parts In-Stock

1+ parts

$0.250

100+ parts

$0.094

1k+ parts

$0.061

10k+ parts

$0.050

2,950

$0.250

$0.094

$0.061

$0.050

Verical

USA . 220 parts In-Stock

1+ parts

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$0.029

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220

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$0.029

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Chip1Stop

Japan . 220 parts In-Stock

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$0.040

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220

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$0.040

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Distributors (In-Stock)

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Vyrian

USA . 589 parts In-Stock

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$0.029

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589

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Digiode

USA . 1,734 parts In-Stock

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$0.143

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$0.143

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NexGen Digital

USA . 4,910 parts In-Stock

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4,910

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ComSIT Distribution GmbH

Germany . 2,358 parts In-Stock

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2,358

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Bristol Electronics

USA . 373 parts In-Stock

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$0.150

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$0.075

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373

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$0.150

$0.075

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Microfarads

USA . 194 parts In-Stock

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194

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Corohmni

South Africa . 319 parts In-Stock

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$0.029

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319

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Corphita

USA . 1,378 parts In-Stock

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$0.136

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1,378

$0.136

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Assy Fe

Spain . 36,000 parts In-Stock

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36,000

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Kepictronics

USA . 18,000 parts In-Stock

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Lixinc

USA . 17,945 parts In-Stock

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Problanco Electronics

Mexico . 7,918 parts In-Stock

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TANS Electronics

Latvia . 6,907 parts In-Stock

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Kulean Microsystems

USA . 5,761 parts In-Stock

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5,761

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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SupplyDigital Components

Austria . 1,156 parts In-Stock

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1,156

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UHIMA Technologies

Türkiye . 289 parts In-Stock

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289

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Overview

Discover the UMC5NT2G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With Onsemi's reputation for excellence in manufacturing, this NPN and PNP transistor offers customers unbeatable value and performance. Featuring a common base configuration with built-in resistors, this product ensures reliable operation and efficient power dissipation. Whether you're in need of superior switching capabilities or looking to enhance your electronic projects, the UMC5NT2G is the ideal choice for professionals and hobbyists alike. Elevate your designs with the precision and reliability of Onsemi's UMC5NT2G transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for internal components.

Polarity or Channel Type: NPN AND PNP

Offers versatility for different circuit designs.

Configuration: COMMON BASE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Simplifies circuit design and integration with built-in resistor.

Transistor Application: SWITCHING

Suitable for applications where high switching speeds are required.

Maximum VCEsat: 0.25 V

Low saturation voltage helps minimize power loss.

Surface Mount: YES

Facilitates easy and efficient PCB assembly.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels effectively.

Minimum DC Current Gain (hFE): 80

Ensures consistent and reliable amplification in circuits.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications.

Minimum Operating Temperature: -65 °C

Can operate effectively in extreme temperature conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) UMC5NT2G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

UMC5NT2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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