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HN1B01FDW1T1

Onsemi

HN1B01FDW1T1 by Onsemi

HN1B01FDW1T1 by Onsemi is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max power dissipation of 0.38 W and is commonly used as an amplifier in various applications. This surface mount transistor has a rectangular package shape with gull wing terminals, making it suitable for compact designs.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 17,980 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

17,980

-

$0.030

$0.025

$0.023

DigiKey

USA . 17,980 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.040

17,980

-

-

-

$0.040

Farnell

UK . 17,980 parts In-Stock

1+ parts

-

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17,980

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Verical

USA . 12,000 parts In-Stock

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$0.038

12,000

-

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$0.038

Distributors (In-Stock)

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Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.019

100+ parts

-

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58

$0.019

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-

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Digiode

USA . 1,762 parts In-Stock

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$0.024

100+ parts

-

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1,762

$0.024

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Chip Stock

USA . 28,000 parts In-Stock

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28,000

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Vyrian

USA . 17,584 parts In-Stock

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17,584

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Distributors (Availability)

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Corohmni

South Africa . 249 parts In-Stock

1+ parts

$0.019

100+ parts

-

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249

$0.019

-

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Argo Parts USA

USA . 4,417 parts In-Stock

1+ parts

$0.019

100+ parts

-

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$0.019

4,417

$0.019

-

-

$0.019

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.019

100+ parts

-

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$0.018

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$0.018

100

$0.019

-

$0.018

$0.018

Ampacity Inc.

Singapore . 17,862 parts In-Stock

1+ parts

$0.021

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-

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17,862

$0.021

-

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Semicontronic

India . 17,689 parts In-Stock

1+ parts

$0.021

100+ parts

$0.020

1k+ parts

$0.020

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17,689

$0.021

$0.020

$0.020

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Corphita

USA . 332 parts In-Stock

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$0.022

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332

$0.022

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AZTECH Wire

Italy . 959 parts In-Stock

1+ parts

$17.330

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959

$17.330

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Continental Prestige Electronics

USA . 17,980 parts In-Stock

1+ parts

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100+ parts

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$0.022

17,980

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$0.022

SupplyDigital Components

Austria . 3,756 parts In-Stock

1+ parts

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3,756

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Problanco Electronics

Mexico . 3,207 parts In-Stock

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3,207

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Kulean Microsystems

USA . 2,635 parts In-Stock

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2,635

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TANS Electronics

Latvia . 2,288 parts In-Stock

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2,288

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UHIMA Technologies

Türkiye . 850 parts In-Stock

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850

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Overview

Experience high-quality performance with the HN1B01FDW1T1 by Onsemi. As a leading manufacturer, Onsemi guarantees reliability and innovation in their Small Signal Bipolar Junction Transistors (BJT). This versatile NPN AND PNP transistor is perfect for amplifier applications, offering exceptional value and benefits to customers. With its surface-mount design, gull-wing terminals, and small outline package style, this transistor delivers convenience without compromising on power. Trust Onsemi to provide top-of-the-line products that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for flexibility in circuit design, making this transistor suitable for a variety of applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor offers high performance and efficiency in amplifying signals.

Maximum Power Dissipation (Abs): 0.38 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, ensuring reliable operation.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures stable and consistent amplification of signals, making this transistor ideal for amplifier circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to perform effectively even in high-temperature environments, increasing its versatility.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) HN1B01FDW1T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HN1B01FDW1T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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