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HN1B01F-GR(TE85L,F)

Toshiba

HN1B01F-GR(TE85L,F) by Toshiba

Toshiba's HN1B01F-GR(TE85L,F) is a Small Signal BJT with NPN and PNP types. It features 0.25V Max VCEsat, 200 Min hFE, and 150MHz fT. Ideal for amplifier applications due to its low power dissipation of 0.3W and max operating temperature of 125°C.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,572 parts In-Stock

1+ parts

$0.460

100+ parts

$0.193

1k+ parts

$0.098

10k+ parts

$0.067

5,572

$0.460

$0.193

$0.098

$0.067

Chip1Stop

Japan . 3,598 parts In-Stock

1+ parts

-

100+ parts

$0.144

1k+ parts

$0.093

10k+ parts

$0.071

3,598

-

$0.144

$0.093

$0.071

Verical

USA . 3,598 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.091

10k+ parts

$0.076

3,598

-

-

$0.091

$0.076

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Perfect Parts

USA . 12,320 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,320

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Overview

Toshiba Bipolar Transistors are pre-biased transistors designed for low noise and low saturation voltage applications. These bipolar transistors are AEC-Q101 qualified and offer PNP, NPN, NPN + NPN, PNP + PNP, and NPN + PNP polarities for operation. These transistors are available in 25MHz, 30MHz, 35MHz, 55MHz, 100MHz, 120MHz, 200MHz, and 300MHz transition frequency with 3 pin, 5pin, 6pin, and 8pin variants.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and applications, making it versatile for different needs.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements allows for individual control and optimization of each transistor, enhancing performance in amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring high-quality signal amplification and performance.

Surface Mount: YES

Surface mount capability enables easy installation and space-saving design for compact electronic devices.

Maximum VCEsat: 0.25 V

Low maximum VCEsat value indicates minimal saturation voltage, leading to efficient power utilization and reduced heat generation.

Package Shape: RECTANGULAR

Rectangular package shape offers easy mounting and compatibility with standard electronic layouts, simplifying integration into circuits.

Terminal Form: GULL WING

Gull wing terminal form provides secure connections and facilitates automated assembly processes for efficient production.

No. of Terminals: 6

Having 6 terminals allows for versatile connectivity options and compatibility with various circuit configurations.

Maximum Power Dissipation (Abs): 0.3 W

High maximum power dissipation value ensures reliable performance under demanding conditions without overheating or damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) HN1B01F-GR(TE85L,F) attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

.3 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

HN1B01F-GR(TE85L,F) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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