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HN1B01FDW1T1G

Onsemi

HN1B01FDW1T1G by Onsemi

HN1B01FDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max collector-emitter voltage of 50V and max operating temp of 150°C, it offers high reliability in various electronic circuits.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,303 parts In-Stock

1+ parts

$0.299

100+ parts

$0.113

1k+ parts

$0.074

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1,303

$0.299

$0.113

$0.074

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Mouser Electronics

USA . 6,768 parts In-Stock

1+ parts

$0.300

100+ parts

$0.116

1k+ parts

$0.076

10k+ parts

$0.053

6,768

$0.300

$0.116

$0.076

$0.053

Chip1Stop

Japan . 1,613 parts In-Stock

1+ parts

$0.747

100+ parts

$0.152

1k+ parts

$0.094

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1,613

$0.747

$0.152

$0.094

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Farnell

UK . 36,182 parts In-Stock

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$0.049

36,182

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$0.049

Rochester

USA . 30,042 parts In-Stock

1+ parts

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$0.047

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$0.039

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$0.035

30,042

-

$0.047

$0.039

$0.035

DigiKey

USA . 30,042 parts In-Stock

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$0.060

30,042

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$0.060

Verical

USA . 21,000 parts In-Stock

1+ parts

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$0.044

21,000

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$0.044

Future Electronics

Canada . 15,000 parts In-Stock

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$0.042

15,000

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$0.042

Element14

Singapore . 1,998 parts In-Stock

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100+ parts

$0.158

1k+ parts

$0.071

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1,998

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$0.158

$0.071

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Distributors (In-Stock)

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Digiode

USA . 180 parts In-Stock

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$0.037

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$0.037

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Nova Conductors

Japan . 100 parts In-Stock

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$0.072

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100

$0.072

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Maritex

Poland . 1,248 parts In-Stock

1+ parts

$0.094

100+ parts

$0.050

1k+ parts

$0.047

10k+ parts

$0.043

1,248

$0.094

$0.050

$0.047

$0.043

Bristol Electronics

USA . 23,171 parts In-Stock

1+ parts

$0.189

100+ parts

$0.095

1k+ parts

$0.038

10k+ parts

$0.024

23,171

$0.189

$0.095

$0.038

$0.024

Flip Electronics

USA . 186,000 parts In-Stock

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DigiKey Marketplace

USA . 48,182 parts In-Stock

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$0.040

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48,182

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$0.040

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NAC Semi

USA . 42,000 parts In-Stock

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$0.160

42,000

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$0.160

Chip Stock

USA . 32,000 parts In-Stock

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Dan-Mar Components

USA . 23,171 parts In-Stock

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Vyrian

USA . 19,642 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12,000 parts In-Stock

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Zilex Electronics Inc.

Canada . 9,000 parts In-Stock

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Prism Electronics

USA . 213 parts In-Stock

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ECAB

Sweden . 20 parts In-Stock

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20

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Distributors (Availability)

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Semicontronic

India . 20,706 parts In-Stock

1+ parts

$0.033

100+ parts

$0.032

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$0.032

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20,706

$0.033

$0.032

$0.032

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Ampacity Inc.

Singapore . 19,108 parts In-Stock

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$0.033

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Corphita

USA . 1,463 parts In-Stock

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Corohmni

South Africa . 87 parts In-Stock

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$0.039

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87

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Argo Parts USA

USA . 4,366 parts In-Stock

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$0.072

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$0.070

4,366

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Netroflash

USA . 500 parts In-Stock

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$0.072

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$0.068

10k+ parts

$0.067

500

$0.072

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$0.067

Perfect Parts

USA . 236,784 parts In-Stock

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Continental Prestige Electronics

USA . 48,182 parts In-Stock

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$0.046

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GreenTree Electronics

Israel . 31,713 parts In-Stock

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Authorized Procurement Solutions

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Eastek

USA . 27,000 parts In-Stock

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Lixinc

USA . 10,703 parts In-Stock

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Kulean Microsystems

USA . 7,383 parts In-Stock

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TANS Electronics

Latvia . 6,884 parts In-Stock

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SupplyDigital Components

Austria . 3,559 parts In-Stock

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3,559

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Kepictronics

USA . 3,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,589 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,726 parts In-Stock

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Problanco Electronics

Mexico . 1,035 parts In-Stock

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UHIMA Technologies

Türkiye . 855 parts In-Stock

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Overview

Elevate your electronic projects with the HN1B01FDW1T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that delivers exceptional performance and reliability. Manufactured by the trusted name Onsemi, this NPN and PNP transistor boasts a versatile configuration with separate elements for amplified audio applications. With a maximum operating temperature of 150°C and a collector-emitter voltage of 50V, this transistor is ideal for a wide range of amplifier circuits. Trust Onsemi to provide you with cutting-edge technology and innovation that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile applications in various circuit designs.

Maximum Power Dissipation: 0.38 W

The high power dissipation capability ensures the transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 200

A high DC current gain means the transistor can amplify small signals efficiently, making it suitable for amplifier applications.

Maximum Collector-Emitter Voltage: 50 V

The high voltage rating provides flexibility in circuit design and ensures the transistor can handle higher voltage levels.

Maximum Collector Current (IC): 0.2 A

The high collector current rating allows the transistor to handle moderate current levels, making it suitable for various amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) HN1B01FDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

HN1B01FDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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