Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPSA12G
Onsemi
MPSA12G by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its configuration and terminal form.
20 V
DARLINGTON
20000
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.625 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
SILICON
MPS4250ARLRMG
MPS4250ARLRMG by Onsemi is a PNP BJT with hFE of 250, VCEO of 40V, and Ptot of 0.625W. Ideal for low-power applications in electronics due to its small size and high gain characteristics. Suitable for use in various electronic circuits requiring a single configuration transistor.
40 V
SINGLE
250
PNP
NSBA114EDXV6T5G
NSBA114EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for small outline applications requiring a transistor with max. power dissipation of 0.5W and min. DC current gain of 35 (hFE). Suitable for surface mount designs needing a compact rectangular package shape.
BUILT IN BIAS RESISTOR RATIO IS 1
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
35
R-PDSO-F6
e3
2
6
RECTANGULAR
SMALL OUTLINE
.5 W
BIP General Purpose Small Signal
YES
TIN
FLAT
DUAL
30
NSBA123JDXV6T1G
NSBA123JDXV6T1G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. power dissipation of 0.5W. It has hFE of 80, VCE of 50V, and IC of 0.1A. Ideal for applications requiring small outline package style in surface mount technology.
BUILT IN BIAS RESISTOR RATIO IS 0.047
80
NSBA123JDXV6T5G
NSBA123JDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 80. It has max voltage of 50V, current of 0.1A, and power dissipation of 0.5W. Ideal for applications requiring small outline package style in temp up to 150 °C like signal amplification circuits.
MATTE TIN
NSBA124EDXV6T5G
NSBA124EDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 60. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
60
NSBA143TDXV6T5G
NSBA143TDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, hFE of 160. It has VCE of 50V, IC of 0.1A, and Ptot of 0.5W. Ideal for small outline applications requiring high DC current gain and low collector-emitter voltage.
BUILT IN BIAS RESISTOR
160
NSBA143ZDXV6T5G
NSBA143ZDXV6T5G by Onsemi is a PNP BJT with 2 elements, built-in resistor, and hFE of 80. It has a max VCE of 50V and IC of 0.1A, suitable for small outline applications requiring low collector current in electronic circuits. The transistor's flat terminals and plastic/epoxy package make it ideal for surface mount designs in various electronic devices.
BUILT IN BIAS RESISTOR RATIO IS 0.1
2SA1020G
2SA1020G by Onsemi is a PNP BJT with max power dissipation of 1.5W, hFE of 40, and max operating temp of 150 °C. Ideal for applications requiring a single configuration transistor with max collector-emitter voltage of 50V, such as amplifiers or signal processing circuits.
2 A
40
1.5 W
100 MHz
2SA1020RLRAG
2SA1020RLRAG by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 1.5W, and max collector current of 2A. It operates up to 150°C, has hFE of at least 40, and fT of 100MHz. Ideal for small signal applications in electronics due to its high performance and reliability.
NST489AMT1
The Onsemi NST489AMT1 is a NPN BJT transistor with 30V VCEO and 2A IC, ideal for switching applications. It has a hFE of 200, fT of 300MHz, and can handle up to 1.75W power dissipation. With GULL WING terminals in a SMALL OUTLINE package, it operates at temperatures up to 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS
30 V
200
R-PDSO-G6
e0
235
1.75 W
TIN LEAD
GULL WING
SWITCHING
300 MHz
NSBC124XPDXV6T5G
NSBC124XPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistors, a max collector-emitter voltage of 50V, and a min DC current gain of 80 (hFE). With a package style of small outline and surface mount capability, it offers versatility in various electronic designs.
BUILT IN BIAS RESISTOR RATIO IS 2.14
NPN AND PNP
DTA114TXV3T1G
PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
.3 W
NSBC114EDXV6T5G
NSBC114EDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline package with matte tin finish operates up to 150 °C, making it suitable for various electronic devices.
NSBC123JDXV6T5G
NSBC123JDXV6T5G by Onsemi is a NPN BJT with 2 elements, built-in resistor for switching applications. Features include VCEsat of 0.25V, hFE of 80, and IC of 0.1A. With max operating temp at 150 °C, it's ideal for small outline SMT designs requiring low power dissipation.
BUILT IN BIAS RESISTOR RATIO 21.36
-55 Cel
.25 V
MMBT5401-D87Z
MMBT5401-D87Z by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 150V and a max collector current of 0.6A. It is commonly used for switching applications due to its high DC current gain (hFE) of 50 and fast nominal transition frequency of 100MHz.
.6 A
150 V
50
TO-236AB
R-PDSO-G3
.225 W
Matte Tin (Sn) - annealed
NSVMUN2236T1G
NSVMUN2236T1G by Onsemi is a NPN BJT with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150 °C and peak reflow temp of 260°C. Suitable for small outline packages in automotive electronics due to AEC-Q101 compliance.
BUILT-IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
.338 W
AEC-Q101
NSCT3904LT1G
NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.
.2 A
4 pF
TO-236
250 ns
70 ns
.3 V
NSCT3904LT3G
NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.
BC337-25RLRAG
BC337-25RLRAG by Onsemi is a NPN BJT transistor with hFE of 160, IC of 0.8A, and fT of 210MHz. Ideal for amplifier applications due to its max power dissipation of 0.625W and operating temperature up to 150 °C in a cylindrical package.
.8 A
45 V
AMPLIFIER
210 MHz
NSVEMT1DXV6T5G
NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.
SEPARATE, 2 ELEMENTS
120
140 MHz
.5 V
NSVDTA123EM3T5G
NSVDTA123EM3T5G by Onsemi is a PNP BJT with built-in resistor for switching applications. Features include hFE of 8, VCE of 50V, and IC of 0.1A. Its small outline package with matte tin finish makes it suitable for surface mount designs in automotive electronics.
BUILT IN BIAS RESISTANCE RATIO IS 1
8
R-PDSO-F3
NSVMUN5333DW1T3G
NSVMUN5333DW1T3G by Onsemi is a Small Signal BJT with NPN and PNP types. It features separate elements with built-in resistor, VCEsat of 0.25V, and hFE min of 80. Ideal for automotive applications due to AEC-Q101 standard compliance and max operating temperature of 150 °C.
BUILT-IN BIAS RESISTOR RATIO IS 10
.385 W
MCH5541-TL-E
MCH5541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels. It features 0.5W power dissipation, 200 min hFE, and 0.7A max collector current. Ideal for applications requiring surface mount technology in environments up to 150 °C.
.7 A
e6
Tin/Bismuth (Sn/Bi)
NSVMMBT6517LT1G
NSVMMBT6517LT1G by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 350V, max. collector current of 0.1A, and min. DC current gain of 15. It is used in small outline packages for applications requiring high power dissipation and temp up to 150 °C.
350 V
15
40 MHz
NSVBC143TPDXV6T1G
NSVBC143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max VCEsat of 0.25V, min hFE of 160, and can handle up to 0.1A collector current. With a package style of small outline and operating temperature range from -55°C to 150°C, it's suitable for various electronic designs requiring compact and efficient transistor solutions.
NSVBC143ZPDXV6T5G
NSVBC143ZPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring 2 elements with built-in resistor. With VCEsat of 0.25V, it operates in temperatures from -55 to 150 °C. Ideal for automotive applications due to AEC-Q101 standard compliance and max collector-emitter voltage of 50V.
BUILT IN BIAS RESISTOR RATIO IS 10
NSVBCW32LT1G
NSVBCW32LT1G by Onsemi is a NPN BJT with 32V VCEO, 0.1A IC, and hFE of 200. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and 150 °C max operating temp.
32 V
NSVMSB1218A-RT1G
NSVMSB1218A-RT1G by Onsemi is a PNP BJT transistor for amplifier applications. It has VCEsat of 0.5V, hFE of 210, and IC of 0.1A. With a max operating temperature of 150 °C, it comes in a small outline package with gull wing terminals.
210
.15 W
NSBC115EPDXV6T1G
NSBC115EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, featuring VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for applications requiring low power dissipation in a compact package, such as signal amplification in electronic circuits.
BUILT IN BAIS RESISTOR RATIO IS 1
NOT SPECIFIED
2SB1203T-E
Onsemi's 2SB1203T-E is a PNP BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 5A. Ideal for switching applications due to its single configuration and high transition frequency of 130MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.
COLLECTOR
5 A
TO-251
R-PSIP-T3
IN-LINE
20 W
TIN BISMUTH
130 MHz
SMMJT350T3G
SMMJT350T3G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 2.75W power dissipation suitable for switching applications. It comes in a small outline package with Gull Wing terminals, operating b/w -55 °C to 150°C. Ideal for automotive electronics due to AEC-Q101 compliance.
.5 A
300 V
20
TO-261AA
R-PDSO-G4
4
2.75 W
NSVBC123JDXV6T5G
NSVBC123JDXV6T5G by Onsemi is a NPN BJT transistor with 0.25 V max VCEsat, 80 min hFE, and 50 V max VCE. It is used for switching applications in automotive electronics due to its AEC-Q101 reference standard compliance and 0.1 A max IC.
BUILT-IN BIAS RESISTOR
MMBT6427LT3G
MMBT6427LT3G by Onsemi is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 14000, and IC of 0.5A. Ideal for small signal applications in electronics due to its high gain and low saturation voltage. Operates b/w -55 to 150 °C, making it suitable for various temperature environments.
7 pF
14000
1.5 V
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