Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MPSA18G
Onsemi
MPSA18G by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.2A. With a min DC current gain of 500, it's ideal for amplifier applications. This through-hole transistor has a max power dissipation of 0.625W and operates up to 150 °C.
LOW NOISE
.2 A
45 V
SINGLE
500
TO-92
O-PBCY-T3
e1
1
3
150 Cel
PLASTIC/EPOXY
ROUND
CYLINDRICAL
260
NPN
.625 W
Not Qualified
Other Transistors
NO
TIN SILVER COPPER
THROUGH-HOLE
BOTTOM
AMPLIFIER
SILICON
160 MHz
MPSA18RLRMG
MPSA18RLRMG by Onsemi is a NPN BJT transistor with 500 min hFE, 45V VCEO, and 160MHz fT. Ideal for amplifier applications due to its 0.2A IC, 0.625W Pdiss, and cylindrical package style. Suitable for through-hole mounting with bottom terminal position.
MPSA27RLRAG
MPSA27RLRAG by Onsemi is a NPN Darlington transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C and has an fT of 125MHz. The package is cylindrical with through-hole terminals made of tin silver copper.
.5 A
60 V
DARLINGTON
10000
125 MHz
MPSA28G
MPSA28G by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.
200 MHz
MPSA29G
MPSA29G by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
100 V
MPSA56RLRPG
MPSA56RLRPG by Onsemi is a PNP BJT with max. collector-emitter voltage of 80V, max. collector current of 0.5A, and min. DC current gain of 100. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. power dissipation of 0.625W in a cylindrical package style.
80 V
100
PNP
50 MHz
MPSA56ZL1G
MPSA56ZL1G by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 0.5A, ideal for amplifier applications. It has a min. DC current gain of 100, operates up to 150 °C, and features a cylindrical package style for through-hole mounting.
EUROPEAN PART NUMBER
MPSA70RLRMG
MPSA70RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for amplifier applications due to its cylindrical package style, it operates at up to 150 °C and has a nominal transition frequency of 125MHz.
.1 A
40 V
40
MPSA75RLRAG
MPSA75RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 40V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
MPSA77RLRAG
MPSA77RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW05G
The Onsemi MPSW05G is a NPN BJT transistor with 60V VCEO, 0.5A IC, and 1W Ptot. Ideal for amplifier applications due to its hFE of 60 and fT of 50MHz. Packaged in a cylindrical shape with through-hole terminals for easy installation.
60
TO-226
1 W
MPSW13RLRAG
MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.
1 A
MPSW45AG
MPSW45AG by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and temperature resistance up to 150°C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
50 V
4000
100 MHz
MPSW45ARLRAG
MPSW45ARLRAG by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW45AZL1G
MPSW45AZL1G by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
MPSW45RLREG
MPSW45RLREG by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and max IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.
MPSW51G
MPSW51G by Onsemi is a PNP BJT with 1W power dissipation, 30V max collector-emitter voltage, and 50MHz transition frequency. Ideal for low-power applications requiring high DC current gain in a cylindrical package with through-hole terminals.
30 V
50
MPSW51AG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 1 A;
MPSW51ARLRAG
MPSW51ARLRPG
MPSW51ARLRPG by Onsemi is a PNP BJT with 1W power dissipation, hFE of 50, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and max. operating temp. of 150°C. Package style: cylindrical, terminals: through-hole with tin silver copper finish.
MPSW63G
MPSW63G by Onsemi is a PNP BJT with 1W power dissipation, hFE of 10000, and IC of 0.5A. Ideal for applications requiring high DC current gain like amplifiers or signal processing circuits due to its Darlington configuration and SILICON material.
MPSW63RLRAG
MPSW63RLRAG by Onsemi is a PNP Darlington BJT with 3 terminals. It features a max power dissipation of 1W, hFE of 10000, and fT of 125MHz. Ideal for applications requiring high current gain and frequency amplification in electronic circuits.
MUN5134T1G
MUN5134T1G by Onsemi is a PNP BJT transistor with single configuration and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable and features a matte tin finish.
BUILT-IN BIAS RESISTOR RATIO IS 2.14
SINGLE WITH BUILT-IN RESISTOR
80
R-PDSO-G3
e3
RECTANGULAR
SMALL OUTLINE
.15 W
BIP General Purpose Small Signals
YES
Matte Tin (Sn) - annealed
GULL WING
DUAL
SWITCHING
P2N2222AG
P2N2222AG by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and hFE of 75. Ideal for amplifier applications, it has a max. collector-emitter voltage of 40V and operates up to 150°C. With a transition frequency of 300MHz, it offers fast turn-on/off times for efficient performance.
.6 A
75
Tin/Silver/Copper (Sn/Ag/Cu)
300 MHz
285 ns
35 ns
P2N2222AZL1G
P2N2222AZL1G by Onsemi is a NPN BJT with 3 terminals, max. power dissipation of 0.625W, and min. DC current gain of 75. Ideal for amplifier applications due to its max. collector-emitter voltage of 40V and nominal transition frequency of 300MHz.
PN2222G
PN2222G by Onsemi is a NPN BJT transistor with max. power dissipation of 1.5W, hFE of 75, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (250MHz). Its through-hole package makes it suitable for various electronic designs.
1.5 W
250 MHz
PN2222ARLRMG
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
PN2907ARLRAG
PN2907ARLRAG by Onsemi is a PNP BJT with hFE of 50, VCEO of 60V, and IC of 0.6A. Ideal for applications requiring high-speed switching such as signal amplification in electronic circuits. Package style: cylindrical, terminal finish: Tin Silver Copper.
100 ns
45 ns
PZT3906T1G
PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.
COLLECTOR
30
TO-261AA
R-PDSO-G4
4
.3 W
MATTE TIN
300 ns
70 ns
2N5400RLRPG
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
120 V
.35 W
BC487BG
BC487BG by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 60V, ideal for switching applications. It has a min. DC current gain of 160 and max. power dissipation of 0.625W, suitable for high-frequency operations up to 200MHz in cylindrical package style.
160
BC487G
BC487G by Onsemi is a NPN BJT transistor with hFE of 60, Vce of 60V, and fT of 200MHz. It is used for switching applications in electronics due to its single configuration and max collector current of 0.5A. The transistor comes in a cylindrical package with through-hole terminals made of silicon material.
BC488BRL1G
BC488BRL1G by Onsemi is a PNP BJT transistor with hFE of 15, VCE of 60V, and IC of 1A. Ideal for switching applications due to its high transition frequency of 150MHz. It comes in a cylindrical package with through-hole terminals for easy installation.
15
150 MHz
BC558CZL1G
PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 360 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;
420
360 MHz
BC847BPDXV6T5G
BC847BPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements, and hFE of 200. It is used in amplifier applications, has a max power dissipation of 0.5W, operates up to 150 °C, with Vce(max) of 45V.
SEPARATE, 2 ELEMENTS
200
R-PDSO-F6
2
6
-55 Cel
NOT SPECIFIED
NPN AND PNP
.5 W
BIP General Purpose Small Signal
Tin (Sn)
FLAT
BC847CDXV6T5G
BC847CDXV6T5G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and Vce of 45V. With a small outline package style and surface mount capability, it operates up to 150 °C and offers a transition frequency of 100MHz.
TIN
BC848CDXV6T1G
BC848CDXV6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a min hFE of 420 and can handle a max collector-emitter voltage of 30V. With a small outline package style and peak reflow temperature of 260°C, it offers high performance in compact designs.
BC848CDXV6T5G
BC848CDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 30V, max operating temp of 150 °C, and min DC current gain of 420 (hFE). This small outline package with flat terminals is surface mountable and has a peak reflow temp of 260°C.
MPSW45G
MPSW45G by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.
BC858CDXV6T5G
BC858CDXV6T5G by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs.
EMX1DXV6T5G
NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;
120
180 MHz
EMZ1DXV6T1G
The Onsemi EMZ1DXV6T1G is a Small Signal BJT with NPN and PNP types in a plastic/epoxy package. It has 2 elements, 6 terminals, and operates as an amplifier with a max power dissipation of 0.5W. With a min hFE of 120 and max fT of 180MHz, it's suitable for applications requiring high-frequency amplification in compact designs.
EMZ1DXV6T5G
The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.
MPS5172G
MPS5172G by Onsemi is a NPN BJT with max. power dissipation of 0.625W, hFE of 100, and VCE of 25V. Ideal for low-power applications in electronics due to its small package size and high DC current gain.
25 V
MPS5172RLRMG
MPS5172RLRMG by Onsemi is a NPN BJT with hFE of 100, VCE of 25V, and IC of 0.1A. Ideal for low-power applications in electronics due to its small size and high reliability. Suitable for use in various circuits requiring a single NPN transistor configuration.
MPS8599RLRMG
MPS8599RLRMG by Onsemi is a PNP BJT transistor with max. power dissipation of 0.625W, hFE of 75, and max. operating temp of 150 °C. Ideal for amplifier applications due to its high transition frequency of 150MHz and max collector-emitter voltage of 80V in a cylindrical package shape.
MSC3930-BT1G
MSC3930-BT1G by Onsemi is a NPN BJT transistor with hFE of 70, VCE of 20V, and fT of 150MHz. Ideal for amplifier applications, it features a GULL WING terminal form in a small outline package suitable for surface mount assembly.
.03 A
20 V
70
EMT1DXV6T5G
EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.
140 MHz
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