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BC848CDXV6T5G

Onsemi

BC848CDXV6T5G by Onsemi

BC848CDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 30V, max operating temp of 150 °C, and min DC current gain of 420 (hFE). This small outline package with flat terminals is surface mountable and has a peak reflow temp of 260°C.

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AZTECH Wire

Italy . 1,146 parts In-Stock

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$21.070

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Component Stockers USA

USA . 300 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 7,732 parts In-Stock

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Kulean Microsystems

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Northwest PG Solutions

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Problanco Electronics

Mexico . 1,523 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 608 parts In-Stock

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Corohmni

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SupplyDigital Components

Austria . 247 parts In-Stock

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Overview

Enhance your electronic projects with the BC848CDXV6T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor with NPN polarity. Manufactured by Onsemi, this transistor offers exceptional performance and reliability for amplifier applications. With a maximum power dissipation of 0.5W and a minimum DC current gain of 420, this transistor delivers high efficiency and precision. Its compact package design and surface mount capability make it ideal for various electronic devices. Trust Onsemi's expertise and elevate your projects with the BC848CDXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, ideal for portable devices.

Polarity or Channel Type: NPN

NPN configuration allows for high power amplification in various electronic circuits.

Configuration: SEPARATE, 2 ELEMENTS

Separate configuration with 2 elements provides flexibility in circuit design and allows for precise control.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high performance and reliability.

Surface Mount: YES

Surface mount capability simplifies the assembly process and saves space on the PCB.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various electronic devices.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and improved functionality.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space and is suitable for applications with limited board space.

Minimum DC Current Gain (hFE): 420

High minimum DC current gain ensures amplification of weak signals with high accuracy.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

High maximum collector-emitter voltage rating provides protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

Can handle a maximum collector current of 0.1A, suitable for low to moderate power applications.

Terminal Finish: TIN

Tin terminal finish ensures proper soldering and connectivity for long-lasting performance.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connections in circuit design.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures reliable solder joints during assembly process.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency allows for fast switching speeds and efficient signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC848CDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC848CDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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