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BC847CDXV6T5G

Onsemi

BC847CDXV6T5G by Onsemi

BC847CDXV6T5G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and Vce of 45V. With a small outline package style and surface mount capability, it operates up to 150 °C and offers a transition frequency of 100MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,907 parts In-Stock

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Digiode

USA . 128 parts In-Stock

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128

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AZTECH Wire

Italy . 38 parts In-Stock

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$16.780

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TANS Electronics

Latvia . 6,876 parts In-Stock

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SupplyDigital Components

Austria . 3,293 parts In-Stock

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Northwest PG Solutions

USA . 2,100 parts In-Stock

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Kulean Microsystems

USA . 1,426 parts In-Stock

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Corphita

USA . 893 parts In-Stock

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Problanco Electronics

Mexico . 680 parts In-Stock

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UHIMA Technologies

Türkiye . 409 parts In-Stock

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Corohmni

South Africa . 316 parts In-Stock

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Native Components

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Overview

Enhance your electronics projects with the BC847CDXV6T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT). Manufactured by Onsemi, this NPN transistor offers superior performance and reliability for amplifier applications. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 420, this transistor provides the perfect balance of power and efficiency. Its compact package shape and surface mount capability make it ideal for space-constrained designs. Trust Onsemi for innovative technology that delivers value and performance in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used type of BJT for amplification purposes.

Configuration: SEPARATE, 2 ELEMENTS

Allows for versatile circuit design and implementation.

Transistor Application: AMPLIFIER

Optimized for use in amplification circuits, ensuring reliable performance.

Surface Mount: YES

Enables easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Facilitates compact and space-saving PCB layout.

No. of Terminals: 6

Provides sufficient connectivity options for various circuit configurations.

Maximum Power Dissipation (Abs): 0.5 W

Suitable for low power applications, preventing overheating.

Minimum DC Current Gain (hFE): 420

Ensures high gain in amplification circuits, improving overall performance.

Maximum Operating Temperature: 150 °C

Can withstand moderate operating temperatures, ensuring reliable operation.

Maximum Collector-Emitter Voltage: 45 V

Provides a high voltage rating for versatility in circuit design.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels for various applications.

Nominal Transition Frequency (fT): 100 MHz

Offers high frequency performance, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847CDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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