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BC858CDXV6T5G

Onsemi

BC858CDXV6T5G by Onsemi

BC858CDXV6T5G by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 5,864 parts In-Stock

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Digiode

USA . 1,789 parts In-Stock

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1,789

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AZTECH Wire

Italy . 264 parts In-Stock

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$18.350

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264

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Component Stockers USA

USA . 692 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 8,268 parts In-Stock

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TANS Electronics

Latvia . 7,179 parts In-Stock

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Problanco Electronics

Mexico . 1,844 parts In-Stock

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Corphita

USA . 1,694 parts In-Stock

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Kulean Microsystems

USA . 1,684 parts In-Stock

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Northwest PG Solutions

USA . 1,235 parts In-Stock

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Native Components

USA . 973 parts In-Stock

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UHIMA Technologies

Türkiye . 557 parts In-Stock

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Corohmni

South Africa . 106 parts In-Stock

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Overview

Experience superior performance and reliability with the BC858CDXV6T5G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) designed for various amplifier applications. With its PNP polarity, separate configuration, and 2 elements, this transistor offers unmatched value and benefits to customers seeking high-performance components. Trust Onsemi for cutting-edge technology and innovation that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and helps in protecting the internal components of the transistor.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other PNP transistors in circuits, offering flexibility in amplifier designs.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration with 2 elements allows for precise control and operation, enhancing the performance of the amplifier circuit.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance and reliability.

Surface Mount: YES

The surface mount capability makes it easy to mount onto circuit boards, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular package shape provides easy integration into circuit designs and ensures a secure fit.

Terminal Form: FLAT

The flat terminal form simplifies the soldering process and ensures a strong connection.

Maximum Power Dissipation (Abs): 0.5 W

With a maximum power dissipation of 0.5W, this transistor can handle higher power levels, making it suitable for various applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 420

The high minimum DC current gain ensures stable and consistent amplification, making it a reliable choice for amplifiers.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable operation even in harsh environments.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor can handle higher voltages without breakdown.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for handling higher currents, ensuring efficient operation.

Terminal Finish: TIN

The tin terminal finish provides good conductivity and corrosion resistance, ensuring long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for easy connection and efficient signal flow in the circuit.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures reliable soldering during the manufacturing process.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100MHz allows for fast response and high-frequency operation, making it suitable for amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858CDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858CDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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