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BC847BPDXV6T5G

Onsemi

BC847BPDXV6T5G by Onsemi

BC847BPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements, and hFE of 200. It is used in amplifier applications, has a max power dissipation of 0.5W, operates up to 150 °C, with Vce(max) of 45V.

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 11,669 parts In-Stock

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Digiode

USA . 1,331 parts In-Stock

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Native Components

USA . 638 parts In-Stock

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$2.120

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638

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Northwest PG Solutions

USA . 1,803 parts In-Stock

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$2.332

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AZTECH Wire

Italy . 694 parts In-Stock

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$10.040

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694

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Problanco Electronics

Mexico . 7,692 parts In-Stock

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Kulean Microsystems

USA . 5,870 parts In-Stock

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TANS Electronics

Latvia . 3,679 parts In-Stock

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SupplyDigital Components

Austria . 3,400 parts In-Stock

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Corphita

USA . 2,469 parts In-Stock

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Corohmni

South Africa . 246 parts In-Stock

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UHIMA Technologies

Türkiye . 196 parts In-Stock

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Overview

Enhance your electronic designs with the BC847BPDXV6T5G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this transistor is perfect for amplifier applications. With NPN and PNP configurations and a maximum operating temperature of 150 °C, this transistor provides versatility and efficiency. Upgrade your projects with this compact and powerful component that delivers superior results. Unlock endless possibilities with the BC847BPDXV6T5G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Allows for flexibility in circuit designs as both NPN and PNP transistors are included.

Configuration: SEPARATE, 2 ELEMENTS

Enables independent use of the two elements, increasing versatility in circuit configurations.

Transistor Application: AMPLIFIER

Designed specifically for use in amplifier circuits, ensuring optimal performance in such applications.

Surface Mount: YES

Facilitates easy and efficient mounting on circuit boards, saving space and improving manufacturability.

Package Shape: RECTANGULAR

Allows for easy integration into circuit designs and PCB layouts.

No. of Elements: 2

Provides the ability to utilize two separate transistor elements for different functions within a circuit.

No. of Terminals: 6

Offers multiple terminal connections for more versatile circuit designs.

Maximum Power Dissipation (Abs): 0.5 W

Can handle relatively high power dissipation, making it suitable for moderate power applications.

Package Style (Meter): SMALL OUTLINE

Compact package style saves space and allows for denser circuit board layouts.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures consistent and reliable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 45 V

Can withstand relatively high voltage levels, expanding its applicability in different circuit designs.

Transistor Element Material: SILICON

Silicon material provides good reliability and performance characteristics for the transistor.

Minimum Operating Temperature: -55 °C

Capable of functioning in low-temperature environments, offering versatility in operating conditions.

Maximum Collector Current (IC): 0.1 A

Can handle moderate collector currents, suitable for various amplifier applications.

Terminal Finish: Tin (Sn)

Tin finish provides reliable electrical connections and solderability for the terminals.

Terminal Position: DUAL

Dual terminal position allows for easier connection and integration into circuit designs.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds and high-frequency operation in amplification circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BPDXV6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BPDXV6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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