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MUN2111T3G

Onsemi

MUN2111T3G by Onsemi

MUN2111T3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface mount transistor comes in a small outline package with Gull Wing terminals.

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Digiode

USA . 1,771 parts In-Stock

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AZTECH Wire

Italy . 1,049 parts In-Stock

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Kulean Microsystems

USA . 8,245 parts In-Stock

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TANS Electronics

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QUARKTWIN TECHNOLOGY LTD

USA . 4,927 parts In-Stock

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SupplyDigital Components

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Corphita

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Overview

Enhance your electronic projects with the high-quality MUN2111T3G Small Signal Bipolar Junction Transistor by Onsemi. With its PNP polarity and built-in resistor, this transistor is perfect for switching applications. Its compact rectangular package and gull wing terminals make it easy to integrate into your designs. Trust Onsemi's reputation for excellence in semiconductor manufacturing to deliver a reliable and efficient product. Experience the value and benefits of using the MUN2111T3G in your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits where PNP transistors are required, providing compatibility with existing designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design by eliminating the need for an external resistor, saving space and reducing costs.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance in switching circuits.

Surface Mount: YES

Being surface mountable makes the transistor easy to solder onto PCBs, reducing assembly time and enhancing reliability in electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and orientation on the PCB, streamlining the assembly process.

No. of Terminals: 3

With 3 terminals, this transistor provides necessary connections for input, output, and biasing, simplifying circuit connections.

Maximum Power Dissipation (Abs): 0.338 W

The high power dissipation rating allows the transistor to handle moderate power levels without overheating, ensuring reliable operation.

Package Style: SMALL OUTLINE

The small outline package style saves space on the PCB, making it ideal for compact electronic devices and applications with size constraints.

Minimum DC Current Gain (hFE): 35

The minimum DC current gain of 35 ensures consistent and stable amplification of current in the transistor, improving performance in various circuits.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50 V, this transistor can handle moderate voltage levels, making it versatile for different circuit requirements.

Transistor Element Material: SILICON

The silicon transistor element material offers high thermal conductivity and reliability, ensuring consistent performance over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1 A allows the transistor to handle moderate current levels, making it suitable for various switching and amplification applications.

Terminal Finish: TIN

The tin terminal finish provides good solderability, ensuring secure and reliable connections during PCB assembly and operation.

Terminal Position: DUAL

The dual terminal position allows for easy insertion and soldering on the PCB, providing flexibility in circuit layout and assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the transistor can withstand the high temperatures of the reflow soldering process, ensuring proper solder connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2111T3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2111T3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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