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MUN2111T1G

Onsemi

MUN2111T1G by Onsemi

MUN2111T1G by Onsemi is a PNP BJT transistor with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This surface-mount transistor operates at up to 150°C and comes in a small outline package shape.

Median Price

$0.033

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

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Newark

USA . 57,000 parts In-Stock

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$0.037

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$0.037

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Mouser Electronics

USA . 28,170 parts In-Stock

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$0.200

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$0.075

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$0.048

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$0.035

28,170

$0.200

$0.075

$0.048

$0.035

Rochester

USA . 650,846 parts In-Stock

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-

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$0.026

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$0.021

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650,846

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Verical

USA . 273,000 parts In-Stock

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EBV Elektronik

Germany . 75,000 parts In-Stock

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Master Electronics

USA . 36,000 parts In-Stock

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DigiKey

USA . 17,555 parts In-Stock

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Arrow

USA . 15,000 parts In-Stock

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Chip1Stop

Japan . 8,480 parts In-Stock

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$0.040

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$0.028

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8,480

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$0.028

Farnell

UK . 21 parts In-Stock

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Digiode

USA . 185 parts In-Stock

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$0.024

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Bristol Electronics

USA . 13,191 parts In-Stock

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13,191

$0.150

$0.075

$0.030

$0.019

TME

Poland . 3,384 parts In-Stock

1+ parts

$0.190

100+ parts

$0.062

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$0.037

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$0.028

3,384

$0.190

$0.062

$0.037

$0.028

Flip Electronics

USA . 75,000 parts In-Stock

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NAC Semi

USA . 66,000 parts In-Stock

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$0.056

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IBS Electronics

USA . 36,000 parts In-Stock

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Dan-Mar Components

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Vyrian

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ComSIT Distribution GmbH

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Chip Stock

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Rebound Electronics

UK . 2,933 parts In-Stock

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ACDS - Activité Composants Distribution Service

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Microfarads

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Nova Conductors

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Distributors (Availability)

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Ampacity Inc.

Singapore . 171,562 parts In-Stock

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$0.014

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Corohmni

South Africa . 291 parts In-Stock

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Corphita

USA . 1,474 parts In-Stock

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Component Stockers USA

USA . 1,512,093 parts In-Stock

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Perfect Parts

USA . 1,749,089 parts In-Stock

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Continental Prestige Electronics

USA . 1,001,846 parts In-Stock

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Eastek

USA . 171,000 parts In-Stock

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GreenTree Electronics

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Metaverse IC Inc.

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Authorized Procurement Solutions

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

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SupplyDigital Components

Austria . 7,953 parts In-Stock

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Problanco Electronics

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Kulean Microsystems

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TANS Electronics

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Futuretech Components

Singapore . 750 parts In-Stock

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UHIMA Technologies

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Netroflash

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Overview

Enhance your electronic projects with the MUN2111T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for switching applications. With its built-in resistor and compact design, this surface-mount transistor is easy to use and versatile. Improve the efficiency of your circuits with the MUN2111T1G and experience superior functionality and value like never before. Upgrade your projects today with this premium transistor from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, making this transistor versatile for different circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making the overall system more compact and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on printed circuit boards, saving assembly time and costs.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to place and secure on circuit boards, ensuring a stable connection.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and reliability, ensuring secure solder connections.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation capability, this transistor can handle a range of switching applications without overheating.

Minimum DC Current Gain (hFE): 35

A minimum DC current gain of 35 ensures stable and predictable amplification in various circuit configurations.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in extended temperature range applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides flexibility in circuit design and protection against voltage spikes.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring long-term operation in demanding applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads without overheating.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides excellent solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and ease of connection to other components in the circuit.

Maximum Time At Peak Reflow Temperature (s): 40

With a maximum time at peak reflow temperature of 40 seconds, this transistor is easy to solder and integrate into manufacturing processes.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures secure solder joints and reliable operation under extreme manufacturing conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2111T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2111T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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