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MUN2112T1G

Onsemi

MUN2112T1G by Onsemi

MUN2112T1G by Onsemi is a PNP BJT with built-in resistor for switching applications. Features include hFE of 60, VCE of 50V, and IC of 0.1A. With Gull Wing terminals and small outline package, it operates up to 150°C making it ideal for compact electronic devices.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 118,668 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

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$0.042

10k+ parts

$0.024

118,668

$0.170

$0.065

$0.042

$0.024

DigiKey

USA . 2,980 parts In-Stock

1+ parts

$0.170

100+ parts

$0.065

1k+ parts

$0.041

10k+ parts

-

2,980

$0.170

$0.065

$0.041

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Rochester

USA . 310,889 parts In-Stock

1+ parts

-

100+ parts

$0.021

1k+ parts

$0.018

10k+ parts

$0.016

310,889

-

$0.021

$0.018

$0.016

EBV Elektronik

Germany . 150,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 87,000 parts In-Stock

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Verical

USA . 56,950 parts In-Stock

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56,950

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Newark

USA . 42,000 parts In-Stock

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$0.033

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$0.033

Distributors (In-Stock)

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Digiode

USA . 1,728 parts In-Stock

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$0.024

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1,728

$0.024

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Vyrian

USA . 1,337 parts In-Stock

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$0.025

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1,337

$0.025

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Bristol Electronics

USA . 15,000 parts In-Stock

1+ parts

$0.091

100+ parts

$0.045

1k+ parts

$0.018

10k+ parts

$0.011

15,000

$0.091

$0.045

$0.018

$0.011

NAC Semi

USA . 120,000 parts In-Stock

1+ parts

-

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$0.056

120,000

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$0.056

Flip Electronics

USA . 87,000 parts In-Stock

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87,000

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Chip Stock

USA . 25,000 parts In-Stock

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Dan-Mar Components

USA . 15,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12,000 parts In-Stock

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R&J Components

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 148,709 parts In-Stock

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$0.021

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Corphita

USA . 1,450 parts In-Stock

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$0.022

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1,450

$0.022

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Corohmni

South Africa . 247 parts In-Stock

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$0.025

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247

$0.025

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Continental Prestige Electronics

USA . 271,889 parts In-Stock

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Authorized Procurement Solutions

USA . 80,000 parts In-Stock

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Perfect Parts

USA . 54,498 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,367 parts In-Stock

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TANS Electronics

Latvia . 5,144 parts In-Stock

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Kulean Microsystems

USA . 4,171 parts In-Stock

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Problanco Electronics

Mexico . 3,138 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 1,572 parts In-Stock

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UHIMA Technologies

Türkiye . 946 parts In-Stock

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946

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Overview

Enhance your electronic designs with the MUN2112T1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, this PNP transistor boasts a single configuration with a built-in resistor, making it a versatile choice for various projects. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A, this transistor offers superior performance and reliability. Upgrade your circuits with the MUN2112T1G and experience the value and benefits that Onsemi products bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in applications requiring high speed switching, making this product suitable for such applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this product convenient and efficient.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

The surface mount capability allows for easy installation and integration into compact electronic devices.

Maximum Power Dissipation (Abs): 0.338 W

With a relatively high power dissipation capacity, this transistor can handle moderate power loads effectively.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures proper amplification of current, essential for effective signal processing.

Maximum Collector-Emitter Voltage: 50 V

The high maximum voltage rating allows for reliable operation in various voltage conditions, increasing versatility.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1 A, suitable for low to moderate current applications.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2112T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2112T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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