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MUN2115T1

Onsemi

MUN2115T1 by Onsemi

MUN2115T1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 160. This surface-mount transistor comes in a small outline package with gull wing terminals.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 68,000 parts In-Stock

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Digiode

USA . 1,502 parts In-Stock

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Vyrian

USA . 723 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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SupplyDigital Components

Austria . 6,082 parts In-Stock

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Problanco Electronics

Mexico . 4,412 parts In-Stock

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TANS Electronics

Latvia . 2,266 parts In-Stock

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Kulean Microsystems

USA . 1,881 parts In-Stock

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Corphita

USA . 894 parts In-Stock

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UHIMA Technologies

Türkiye . 732 parts In-Stock

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Corohmni

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Overview

Upgrade your electronic devices with the MUN2115T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this PNP transistor is ideal for switching applications. With a built-in resistor and a maximum power dissipation of 0.2 W, this transistor delivers exceptional value and efficiency. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the MUN2115T1 provides the perfect solution for your needs. Trust Onsemi to elevate your projects to the next level with cutting-edge technology and superior quality components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: PNP

Suitable for complementary NPN transistors in various circuit applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already having a resistor built-in, saving space and reducing component count.

Transistor Application: SWITCHING

Optimized for high-speed switching applications, providing efficient and reliable performance.

Surface Mount: YES

Easy to mount on circuit boards, enabling compact and space-saving designs.

Package Shape: RECTANGULAR

Efficient use of space and easy placement on circuit boards.

Terminal Form: GULL WING

Provides secure and reliable connections during soldering and ensures proper electrical contact.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.2 W

Suitable for low to medium power applications, ensuring safe operation within specified limits.

Package Style (Meter): SMALL OUTLINE

Compact design for space-constrained applications.

Minimum DC Current Gain (hFE): 160

Ensures sufficient current amplification for reliable transistor operation.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels, suitable for a range of applications.

Transistor Element Material: SILICON

Highly durable and reliable material for transistor construction.

Maximum Collector Current (IC): 0.1 A

Adequate current handling capacity for various circuit requirements.

Terminal Finish: TIN LEAD

Provides good solderability for reliable electrical connections.

Terminal Position: DUAL

Enables versatile and flexible mounting options.

Peak Reflow Temperature °C: 235

Suitable reflow temperature for soldering process, ensuring proper connection and reliability.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2115T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2115T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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