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MUN2111T1

Onsemi

MUN2111T1 by Onsemi

MUN2111T1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 143,230 parts In-Stock

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-

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$0.030

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$0.025

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$0.023

143,230

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$0.030

$0.025

$0.023

DigiKey

USA . 143,230 parts In-Stock

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$0.040

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Verical

USA . 81,000 parts In-Stock

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Freelance Electronics

USA . 2,400 parts In-Stock

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$0.017

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2,400

$0.017

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Digiode

USA . 504 parts In-Stock

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$0.024

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Vyrian

USA . 324 parts In-Stock

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324

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Component Electronics Inc.

Canada . 3,000 parts In-Stock

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$0.770

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$0.580

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$0.500

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3,000

$0.770

$0.580

$0.500

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Chip Stock

USA . 61,000 parts In-Stock

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Electronic Expediters

USA . 5,554 parts In-Stock

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BCID Electronics Ltd.

Israel . 3,450 parts In-Stock

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PC Components Company LLC

USA . 3,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

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Elcom Components

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Semi Source

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Atlantic Semiconductor

USA . 1,000 parts In-Stock

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Mentor Electronics Marketing, LLC

USA . 250 parts In-Stock

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250

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Prism Electronics

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50

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Distributors (Availability)

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Corohmni

South Africa . 456 parts In-Stock

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$0.017

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456

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Corphita

USA . 940 parts In-Stock

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$0.022

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940

$0.022

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Continental Prestige Electronics

USA . 143,230 parts In-Stock

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Metaverse IC Inc.

Canada . 27,000 parts In-Stock

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Kepictronics

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Perfect Parts

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TANS Electronics

Latvia . 6,335 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,988 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 3,049 parts In-Stock

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Cyclops Electronics Ltd (Excess)

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S.R.D Solutions

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Problanco Electronics

Mexico . 2,891 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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SupplyDigital Components

Austria . 1,658 parts In-Stock

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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Futuretech Components

Singapore . 750 parts In-Stock

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Kulean Microsystems

USA . 633 parts In-Stock

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Overview

Upgrade your electronic projects with the MUN2111T1 by Onsemi. Manufactured to the highest quality standards, this PNP small signal bipolar junction transistor is designed for switching applications, offering reliable performance and efficiency. With a built-in resistor and low power dissipation, this transistor provides exceptional value and versatility for a wide range of applications. Trust Onsemi's expertise in semiconductor technology and elevate your designs with the MUN2111T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor, saving time and space.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required.

Surface Mount: YES

Easy to mount on PCBs, making it suitable for automated assembly processes.

Package Shape: RECTANGULAR

Fits easily into compact spaces on a circuit board.

Terminal Form: GULL WING

Provides secure soldering connections for reliability.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels, suitable for many applications.

Minimum DC Current Gain (hFE): 35

Ensures consistent and reliable amplification of current.

Maximum Collector-Emitter Voltage: 50 V

Can withstand relatively high voltage levels.

Transistor Element Material: SILICON

Provides stable and predictable performance over a wide range of temperatures.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for various applications.

Terminal Finish: TIN LEAD

Ensures good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Provides flexibility in circuit layout and connection options.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2111T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2111T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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