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MUN2130T1

Onsemi

MUN2130T1 by Onsemi

MUN2130T1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.2W. This surface-mount device comes in a small outline package with gull wing terminals, making it suitable for compact electronic designs.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

39,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.040

39,000

-

-

-

$0.040

Verical

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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39,000

-

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Distributors (In-Stock)

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Digiode

USA . 2,334 parts In-Stock

1+ parts

$0.024

100+ parts

-

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2,334

$0.024

-

-

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Vyrian

USA . 2,360 parts In-Stock

1+ parts

$0.025

100+ parts

-

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2,360

$0.025

-

-

-

Chip Stock

USA . 45,000 parts In-Stock

1+ parts

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45,000

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,898 parts In-Stock

1+ parts

$0.022

100+ parts

-

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1,898

$0.022

-

-

-

Corohmni

South Africa . 190 parts In-Stock

1+ parts

$0.025

100+ parts

-

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190

$0.025

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-

Advanced Electronics

New Zealand . 800 parts In-Stock

1+ parts

$0.862

100+ parts

$0.853

1k+ parts

$0.819

10k+ parts

-

800

$0.862

$0.853

$0.819

-

Continental Prestige Electronics

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.021

39,000

-

-

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$0.021

QUARKTWIN TECHNOLOGY LTD

USA . 18,478 parts In-Stock

1+ parts

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18,478

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SupplyDigital Components

Austria . 4,886 parts In-Stock

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4,886

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Problanco Electronics

Mexico . 4,601 parts In-Stock

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4,601

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Kulean Microsystems

USA . 2,935 parts In-Stock

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2,935

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TANS Electronics

Latvia . 705 parts In-Stock

1+ parts

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705

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UHIMA Technologies

Türkiye . 108 parts In-Stock

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108

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Overview

Upgrade your electronic designs with the MUN2130T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance in switching applications. With a PNP polarity and built-in resistor, this transistor provides reliability and efficiency. Whether you're working on consumer electronics, automotive systems, or industrial equipment, the MUN2130T1 delivers consistent results. Trust Onsemi's reputation for excellence and enhance your projects with this versatile component. Choose value, choose quality, choose the MUN2130T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides a lightweight and durable exterior, making this transistor easy to handle and resistant to damage during installation or operation.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching applications, making this transistor suitable for efficient switching operations.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and helps in controlling current flow, making this transistor a convenient choice for applications where precise current regulation is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and reliable performance in high-speed switching circuits.

Surface Mount: YES

Surface mount capability allows for easy and secure mounting on PCBs, saving space and facilitating efficient assembly in compact electronic devices.

Package Shape: RECTANGULAR

Rectangular shape of the package enables easy placement and alignment during PCB assembly, ensuring a smooth and hassle-free integration into electronic circuits.

No. of Terminals: 3

With three terminals, this transistor offers simplified connectivity and ease of integration in circuits that require minimal wiring for efficient operation.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels, making it suitable for low to medium power applications without risk of overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, allowing for compact and efficient circuit designs in devices where size is a critical factor.

Minimum DC Current Gain (hFE): 3

With a minimum DC current gain of 3, this transistor provides consistent and stable amplification of input signals, ensuring reliable performance in various electronic applications.

Maximum Collector-Emitter Voltage: 50V

The maximum collector-emitter voltage of 50V ensures safe and reliable operation in circuits where higher voltage levels are required, offering increased flexibility in design.

Transistor Element Material: SILICON

Silicon-based transistor element material offers high performance and reliability, making this transistor ideal for demanding applications where precision and durability are essential.

Maximum Collector Current (IC): 0.1A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for various low to medium current applications without risk of overload.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good electrical conductivity and solderability, ensuring secure connections and reliable performance in electronic circuits.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and facilitates easier connections, allowing for versatile applications and simplified integration in electronic systems.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes, ensuring reliable solder joints and secure connections during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2130T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

3

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2130T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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