Loading...

MUN2115T3

Onsemi

MUN2115T3 by Onsemi

MUN2115T3 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 160, max temp of 150 °C, and max VCE of 50V. This surface-mount device in rectangular shape has Gull Wing terminals and can handle up to 0.1A collector current.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,818 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,818

-

-

-

-

Digiode

USA . 1,533 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,533

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 5,832 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,832

-

-

-

-

Problanco Electronics

Mexico . 2,460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,460

-

-

-

-

Kulean Microsystems

USA . 2,299 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,299

-

-

-

-

UHIMA Technologies

Türkiye . 768 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

768

-

-

-

-

Corphita

USA . 535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

535

-

-

-

-

SupplyDigital Components

Austria . 247 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

247

-

-

-

-

Corohmni

South Africa . 91 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

91

-

-

-

-

Overview

Upgrade your electronic devices with the MUN2115T3 by Onsemi, a high-quality PNP small signal bipolar junction transistor that boasts a single configuration with a built-in resistor for efficient switching applications. Designed with a durable plastic/epoxy body, this transistor offers a minimum DC current gain of 160 and a maximum collector-emitter voltage of 50V, ensuring reliable performance even in demanding conditions. With its compact size and surface mount capability, the MUN2115T3 is perfect for a wide range of applications where space is limited. Trust Onsemi's reputation for excellence and unlock the potential of your projects with this versatile component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and insulation for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor suitable for a wide range of switching purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for applications where space is a concern.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency, making it ideal for tasks that require rapid on/off transitions.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape of the package offers a stable mounting surface and facilitates efficient heat dissipation, ensuring reliable operation under heavy loads.

Terminal Form: GULL WING

The gull wing terminal form provides strong solder joints, enhancing the reliability and durability of the transistor in demanding environments.

No. of Terminals: 3

With three terminals, this transistor is easy to integrate into circuits and offers flexibility for various connection configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making this transistor suitable for compact electronics where size is a critical factor.

Minimum DC Current Gain (hFE): 160

A high minimum DC current gain ensures consistent and stable amplification performance, making this transistor reliable in signal processing applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand elevated temperatures, ensuring reliable operation in harsh environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides a wide voltage tolerance range, making this transistor suitable for applications requiring high voltage handling capabilities.

Transistor Element Material: SILICON

Silicon-based transistors offer high efficiency and reliability, making this transistor a durable and long-lasting choice for various electronic circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, making it suitable for low to medium power applications.

Terminal Finish: TIN LEAD

Tin lead finish on the terminals ensures good solderability and reliable connections, reducing the risk of dry joints and enhancing the transistor's overall performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in PCB layout and circuit design, allowing for convenient integration into various electronic devices and systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2115T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2115T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20