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MUN2114T1

Onsemi

MUN2114T1 by Onsemi

MUN2114T1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). This small outline transistor in gull wing package is made of silicon and can dissipate up to 0.2W power.

Median Price

$0.035

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 78,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

78,000

-

$0.030

$0.025

$0.023

DigiKey

USA . 78,000 parts In-Stock

1+ parts

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$0.040

78,000

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$0.040

Verical

USA . 60,000 parts In-Stock

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60,000

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Digiode

USA . 2,007 parts In-Stock

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$0.024

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2,007

$0.024

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Vyrian

USA . 979 parts In-Stock

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$0.025

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979

$0.025

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DigiKey Marketplace

USA . 78,000 parts In-Stock

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78,000

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PC Components Company LLC

USA . 2,500 parts In-Stock

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2,500

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Bristol Electronics

USA . 2,500 parts In-Stock

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2,500

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Chip Stock

USA . 725 parts In-Stock

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725

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Distributors (Availability)

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Corphita

USA . 1,259 parts In-Stock

1+ parts

$0.022

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1,259

$0.022

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Corohmni

South Africa . 401 parts In-Stock

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$0.025

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401

$0.025

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Continental Prestige Electronics

USA . 78,000 parts In-Stock

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$0.021

78,000

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$0.021

J Silver Components DBA - Lantern Electronics

USA . 12,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,241 parts In-Stock

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Kulean Microsystems

USA . 8,021 parts In-Stock

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TANS Electronics

Latvia . 7,133 parts In-Stock

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Problanco Electronics

Mexico . 5,452 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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3,000

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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SupplyDigital Components

Austria . 1,890 parts In-Stock

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1,890

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UHIMA Technologies

Türkiye . 765 parts In-Stock

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765

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Overview

Unlock the potential of your electronic projects with the MUN2114T1 PNP transistor by Onsemi. Crafted with precision and expertise, this high-quality component is designed for switching applications, offering reliable performance and durability. With a built-in resistor for added convenience, this transistor is perfect for a wide range of projects. Trust Onsemi's reputation for excellence and elevate your designs with the MUN2114T1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration with other components in PNP transistor circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable in controlling currents.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on PCBs.

Package Shape: RECTANGULAR

Rectangular shape fits well on PCBs and makes it easy to align with other components.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and facilitate automated soldering processes.

No. of Terminals: 3

Having 3 terminals allows for easy connection to other components in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power loads efficiently.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and makes it suitable for compact designs.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle higher voltage applications.

Transistor Element Material: SILICON

Silicon gives the transistor high efficiency and reliability in operation.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to moderate current applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for flexibility in mounting and connection options.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this transistor can withstand high-temperature soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2114T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2114T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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