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MUN2112T1

Onsemi

MUN2112T1 by Onsemi

MUN2112T1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 60 (hFE). This small outline transistor in plastic/epoxy package is surface mountable with gull wing terminals.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

51,000

-

$0.066

$0.055

$0.049

DigiKey

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.080

51,000

-

-

-

$0.080

Verical

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

$0.061

51,000

-

-

-

$0.061

Distributors (In-Stock)

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Digiode

USA . 2,238 parts In-Stock

1+ parts

$0.051

100+ parts

-

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2,238

$0.051

-

-

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Vyrian

USA . 1,729 parts In-Stock

1+ parts

$0.054

100+ parts

-

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1,729

$0.054

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-

-

Chip Stock

USA . 54,000 parts In-Stock

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54,000

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DigiKey Marketplace

USA . 51,000 parts In-Stock

1+ parts

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51,000

-

-

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Electronics Depot

USA . 218 parts In-Stock

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218

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LittleDiode

UK . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 171 parts In-Stock

1+ parts

$0.048

100+ parts

-

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171

$0.048

-

-

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Corphita

USA . 902 parts In-Stock

1+ parts

$0.049

100+ parts

-

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902

$0.049

-

-

-

Component Stockers USA

USA . 45,691 parts In-Stock

1+ parts

$0.050

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

45,691

$0.050

$0.050

$0.050

$0.050

Continental Prestige Electronics

USA . 51,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.052

10k+ parts

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51,000

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-

$0.052

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QUARKTWIN TECHNOLOGY LTD

USA . 26,861 parts In-Stock

1+ parts

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26,861

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J Silver Components DBA - Lantern Electronics

USA . 8,875 parts In-Stock

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8,875

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Assy Fe

Spain . 6,000 parts In-Stock

1+ parts

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6,000

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TANS Electronics

Latvia . 5,608 parts In-Stock

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5,608

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SupplyDigital Components

Austria . 3,654 parts In-Stock

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3,654

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Problanco Electronics

Mexico . 3,454 parts In-Stock

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3,454

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Kulean Microsystems

USA . 3,085 parts In-Stock

1+ parts

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3,085

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

1+ parts

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3,000

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UHIMA Technologies

Türkiye . 51 parts In-Stock

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51

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Overview

Unlock the power of efficient switching with the MUN2112T1 by Onsemi. Designed with high-quality materials and advanced technology, this PNP transistor offers reliability and performance like no other. Perfect for a variety of applications, this small signal BJT with a built-in resistor is a game-changer in the electronics industry. With its compact size and maximum power dissipation of 0.2 W, customers can trust that their devices will operate seamlessly. Say goodbye to technical glitches and hello to smooth operations with the MUN2112T1 by Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into circuits requiring PNP transistors.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by including a built-in resistor, reducing the need for additional components.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response times and low power consumption.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and space in the circuit design.

Package Shape: RECTANGULAR

Facilitates easy placement and mounting of the transistor on the circuit board.

No. of Terminals: 3

Simplifies the connection process and reduces chances of wiring errors.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 60

Ensures consistent and stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to moderate voltage applications, providing flexibility in circuit design.

Transistor Element Material: SILICON

Offers reliable performance and durability, making the transistor suitable for various environments.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, making it suitable for a wide range of applications.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability, ensuring secure connections in the circuit.

Terminal Position: DUAL

Facilitates easy and efficient mounting on the PCB, enhancing the overall reliability of the circuit.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2112T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2112T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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