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MUN2211T1G

Onsemi

MUN2211T1G by Onsemi

MUN2211T1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor operates up to 150°C and is surface mountable in a rectangular package shape.

Median Price

$0.036

Lifecycle Status

Suppliers In-Stock

33

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 30,833 parts In-Stock

1+ parts

$0.200

100+ parts

$0.075

1k+ parts

$0.048

10k+ parts

$0.036

30,833

$0.200

$0.075

$0.048

$0.036

Newark

USA . 183,286 parts In-Stock

1+ parts

$0.207

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$0.081

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$0.061

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183,286

$0.207

$0.081

$0.061

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Adafruit Industries

USA . 50 parts In-Stock

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$1.340

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$1.219

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$1.099

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$1.340

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$1.099

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Rochester

USA . 231,775 parts In-Stock

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$0.026

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$0.019

Chip1Stop

Japan . 215,443 parts In-Stock

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Arrow

USA . 147,000 parts In-Stock

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Verical

USA . 147,000 parts In-Stock

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Master Electronics

USA . 120,000 parts In-Stock

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Avnet

USA . 117,000 parts In-Stock

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Flip Electronics (Authorized)

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DigiKey

USA . 41,326 parts In-Stock

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Farnell

UK . 27,923 parts In-Stock

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Element14

Singapore . 27,923 parts In-Stock

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$0.100

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$0.064

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$0.063

27,923

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Future Electronics

Canada . 15,000 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 251 parts In-Stock

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$0.024

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Nova Conductors

Japan . 10 parts In-Stock

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$0.041

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Bristol Electronics

USA . 9,239 parts In-Stock

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$0.098

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$0.049

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$0.019

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$0.012

9,239

$0.098

$0.049

$0.019

$0.012

TME

Poland . 21,370 parts In-Stock

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$0.100

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$0.042

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$0.025

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$0.019

21,370

$0.100

$0.042

$0.025

$0.019

IBS Electronics

USA . 136,766 parts In-Stock

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$0.279

100+ parts

$0.165

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$0.041

136,766

$0.279

$0.165

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$0.041

Ozdisan Elektronik

Türkiye . 509,535 parts In-Stock

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$43.688

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Chip Stock

USA . 378,570 parts In-Stock

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Vyrian

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Cyclops Electronics Ltd

UK . 42,000 parts In-Stock

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NAC Semi

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Flip Electronics

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North Shore Components

USA . 4,802 parts In-Stock

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Dan-Mar Components

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Microfarads

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Semi Source

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QIE Inc.

USA . 2,580 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,067 parts In-Stock

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ComSIT Distribution GmbH

Germany . 992 parts In-Stock

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NPI Materials, Inc.

USA . 130 parts In-Stock

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Ampacity Inc.

Singapore . 102,001 parts In-Stock

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$0.017

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Corohmni

South Africa . 255 parts In-Stock

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Corphita

USA . 912 parts In-Stock

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Argo Parts USA

USA . 1,784 parts In-Stock

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$0.041

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$0.039

1,784

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Bastille Electronics

Australia . 1,000 parts In-Stock

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$0.041

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$0.039

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$0.037

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$0.036

1,000

$0.041

$0.039

$0.037

$0.036

Modulus Dynamics

Lithuania . 13,839 parts In-Stock

1+ parts

$0.555

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$0.555

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$0.555

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13,839

$0.555

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.340

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$1.219

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$1.099

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50

$1.340

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Aztec Data Supply Inc.

USA . 2,199 parts In-Stock

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$1.523

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Eastek

USA . 2,892,000 parts In-Stock

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GreenTree Electronics

Israel . 2,892,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,373,000 parts In-Stock

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Perfect Parts

USA . 2,164,488 parts In-Stock

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Continental Prestige Electronics

USA . 812,282 parts In-Stock

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Infinite Electronics LLP (Excess)

. 270,004 parts In-Stock

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RC Electronics

USA . 144,800 parts In-Stock

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Glotronic Ltd.

UK . 79,546 parts In-Stock

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ChipstoGo Electronic ltd

UK . 51,000 parts In-Stock

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FE SAS

France . 8,600 parts In-Stock

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SupplyDigital Components

Austria . 5,686 parts In-Stock

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Problanco Electronics

Mexico . 5,344 parts In-Stock

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Futuretech Components

Singapore . 4,240 parts In-Stock

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TANS Electronics

Latvia . 4,176 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,986 parts In-Stock

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Kepictronics

USA . 2,128 parts In-Stock

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Component Connect

USA . 1,734 parts In-Stock

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Kulean Microsystems

USA . 1,704 parts In-Stock

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Assy Fe

Spain . 1,450 parts In-Stock

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UHIMA Technologies

Türkiye . 119 parts In-Stock

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Overview

Enhance your electronic projects with the MUN2211T1G by Onsemi, a high-quality NPN transistor with a built-in resistor. Manufactured by Onsemi, a leading brand in the industry known for its reliability and innovation, this small signal BJT is perfect for switching applications. With a maximum collector-emitter voltage of 50V and a compact rectangular package shape, this transistor offers exceptional performance and efficiency. Upgrade your designs with the MUN2211T1G and experience the superior quality and value that Onsemi products provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Built-in resistor simplifies circuit design and saves space, making it convenient for applications requiring resistive loads.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such circuits.

Surface Mount: YES

Suitable for automated assembly processes, improving efficiency and consistency in manufacturing.

Maximum Power Dissipation (Abs): 0.338 W

Can handle moderate power dissipation, suitable for various low to medium power applications.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to handle, facilitating installation and circuit integration.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, it can be used in circuits with higher voltages, providing flexibility in design.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate collector current, suitable for various low to medium current applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2211T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2211T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-625-4409, 5961016254409

NIIN

016254409

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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