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MUN2111T3

Onsemi

MUN2111T3 by Onsemi

MUN2111T3 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor in gull wing package is ideal for surface mount designs.

Median Price

$0.053

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

10,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

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$0.070

10,000

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$0.070

Verical

USA . 10,000 parts In-Stock

1+ parts

-

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$0.049

10,000

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$0.049

Distributors (In-Stock)

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Digiode

USA . 1,442 parts In-Stock

1+ parts

$0.041

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1,442

$0.041

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Vyrian

USA . 2,444 parts In-Stock

1+ parts

$0.043

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2,444

$0.043

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Chip Stock

USA . 27,000 parts In-Stock

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27,000

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DigiKey Marketplace

USA . 10,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,824 parts In-Stock

1+ parts

$0.037

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9,824

$0.037

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Corphita

USA . 2,245 parts In-Stock

1+ parts

$0.039

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2,245

$0.039

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Corohmni

South Africa . 176 parts In-Stock

1+ parts

$0.043

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176

$0.043

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QUARKTWIN TECHNOLOGY LTD

USA . 10,542 parts In-Stock

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10,542

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Continental Prestige Electronics

USA . 10,000 parts In-Stock

1+ parts

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$0.041

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$0.041

SupplyDigital Components

Austria . 7,379 parts In-Stock

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7,379

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Problanco Electronics

Mexico . 4,261 parts In-Stock

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4,261

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Kulean Microsystems

USA . 1,680 parts In-Stock

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1,680

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TANS Electronics

Latvia . 1,199 parts In-Stock

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1,199

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UHIMA Technologies

Türkiye . 702 parts In-Stock

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702

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Overview

Upgrade your electronic projects with the high-quality MUN2111T3 by Onsemi. This Small Signal Bipolar Junction Transistor (BJT) boasts a PNP polarity and single configuration with a built-in resistor, making it perfect for switching applications. Its compact rectangular shape and gull wing terminals allow for easy surface mounting. With a maximum power dissipation of 0.2W and maximum collector-emitter voltage of 50V, this transistor offers superior performance and reliability. Say goodbye to technical headaches and hello to seamless functionality with the MUN2111T3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for long-lasting performance and reliability.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by integrating a resistor into the transistor package.

Transistor Application: SWITCHING

Ideal for switching applications where fast responses are needed.

Surface Mount: YES

Easy to mount on PCBs for efficient manufacturing processes.

Package Shape: RECTANGULAR

Saves space on PCB and allows for efficient component placement.

Terminal Form: GULL WING

Facilitates easy soldering and assembly on PCBs.

Maximum Power Dissipation (Abs): 0.2 W

Can handle a maximum power dissipation of 0.2 W, suitable for low-power applications.

Minimum DC Current Gain (hFE): 35

Provides a minimum DC current gain of 35, ensuring stable amplification.

Maximum Collector-Emitter Voltage: 50 V

Can withstand a maximum collector-emitter voltage of 50 V for various voltage requirements.

Transistor Element Material: SILICON

Uses silicon as the transistor element material for reliable performance.

Maximum Collector Current (IC): 0.1 A

Designed to handle a maximum collector current of 0.1 A for low-current applications.

Terminal Finish: TIN LEAD

Tin lead finish for good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position for easy and secure connections.

Peak Reflow Temperature °C: 235

Can withstand peak reflow temperature of 235 °C during assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2111T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2111T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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