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MUN2114T3

Onsemi

MUN2114T3 by Onsemi

MUN2114T3 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in plastic/epoxy package is surface mountable with gull wing terminals.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,140 parts In-Stock

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Digiode

USA . 66 parts In-Stock

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TANS Electronics

Latvia . 7,996 parts In-Stock

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Kulean Microsystems

USA . 2,212 parts In-Stock

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Corphita

USA . 1,480 parts In-Stock

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SupplyDigital Components

Austria . 1,380 parts In-Stock

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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685

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Corohmni

South Africa . 374 parts In-Stock

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Problanco Electronics

Mexico . 221 parts In-Stock

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Overview

Upgrade your electronic devices with the reliable MUN2114T3 by Onsemi. This Small Signal Bipolar Junction Transistor (BJT) offers top-notch quality and performance, making it a must-have for any switching application. With a single configuration and built-in resistor, this PNP transistor is designed for convenience and efficiency. Its compact size and surface mount capability make it perfect for space-constrained projects. Trust Onsemi's reputation for excellence and trust the MUN2114T3 to deliver superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor ideal for such purposes.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for use in small electronic devices.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Suitable for surface mount technology, allowing for efficient and compact PCB design.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to handle and mount in a circuit board.

Terminal Form: GULL WING

Gull wing terminals provide good mechanical strength and reliable electrical connections.

Maximum Power Dissipation (Abs): 0.2 W

With a high maximum power dissipation rating, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

A high DC current gain ensures efficient amplification and switching capabilities.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for operation in a wide range of voltages.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making this transistor a dependable choice.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1 A, suitable for low-power applications.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability, making it easy to mount the transistor on a PCB.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options in a circuit.

Peak Reflow Temperature °C: 235

With a high peak reflow temperature, this transistor can withstand the soldering process without damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2114T3 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2114T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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