Loading...

MUN2116T1

Onsemi

MUN2116T1 by Onsemi

MUN2116T1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is made of silicon and can handle up to 0.2W power dissipation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 4,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,700

-

-

-

-

Digiode

USA . 1,947 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,947

-

-

-

-

Vyrian

USA . 891 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

891

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 8,052 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,052

-

-

-

-

TANS Electronics

Latvia . 4,056 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,056

-

-

-

-

Problanco Electronics

Mexico . 2,353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,353

-

-

-

-

UHIMA Technologies

Türkiye . 850 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

850

-

-

-

-

SupplyDigital Components

Austria . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Corphita

USA . 447 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

447

-

-

-

-

Corohmni

South Africa . 427 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

427

-

-

-

-

Overview

Enhance your electronic projects with the MUN2116T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader Onsemi, this PNP transistor comes in a convenient surface-mount package and features a built-in resistor for simplified circuit design. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 160, this transistor offers reliable performance and efficiency. Elevate your designs with the MUN2116T1 and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor and ensures durability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies the design by including a resistor within the transistor package.

Transistor Application: SWITCHING

Ideal for switching applications due to its design and specifications.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Package Shape: RECTANGULAR

Helps in easy placement and orientation during assembly.

Terminal Form: GULL WING

Enables secure and reliable connection to the circuit.

No. of Terminals: 3

Sufficient for the required connections in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

Can handle a reasonable amount of power without overheating.

Package Style (Meter): SMALL OUTLINE

Compact and space-saving design for integration into small devices or circuits.

Minimum DC Current Gain (hFE): 160

Provides high amplification capability in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring up to 50 volts of collector-emitter voltage.

Transistor Element Material: SILICON

Ensures reliable performance and durability of the transistor.

Maximum Collector Current (IC): 0.1 A

Capable of handling currents up to 0.1 ampere safely.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for easy assembly.

Terminal Position: DUAL

Allows for flexibility in circuit connections.

Peak Reflow Temperature °C: 235

Can withstand high temperatures during the reflow soldering process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MUN2116T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MUN2116T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20