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MPSA42RL1G

Onsemi

MPSA42RL1G by Onsemi

MPSA42RL1G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for low-power applications, it has a max power dissipation of 1.5W and operates b/w -55°C to 150°C. The through-hole package with tin silver copper finish makes it suitable for various electronic designs.

Median Price

$0.375

Lifecycle Status

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11

In-Stock Inventory

1k+

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Chip Stock

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Vyrian

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Martec Srl

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Bristol Electronics

USA . 1,870 parts In-Stock

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$0.375

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$0.150

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Microfarads

USA . 1,767 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,700 parts In-Stock

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ComSIT USA

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Digiode

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Nova Conductors

Japan . 15 parts In-Stock

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Prism Electronics

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Aztec Data Supply Inc.

USA . 4,395 parts In-Stock

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$0.777

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AZTECH Wire

Italy . 520 parts In-Stock

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$17.584

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Ampacity Inc.

Singapore . 941 parts In-Stock

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$29.050

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Semicontronic

India . 281 parts In-Stock

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$54.050

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$52.699

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$52.428

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Perfect Parts

USA . 33,445 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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SupplyDigital Components

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Kulean Microsystems

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Lixinc

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TANS Electronics

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Problanco Electronics

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Robosynatics

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Lucentia Tech

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Continental Prestige Electronics

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Overview

Unlock endless possibilities with the MPSA42RL1G Small Signal Bipolar Junction Transistor by Onsemi. Crafted with precision and expertise, this NPN transistor offers reliable performance and durability in a variety of applications. Whether you're designing circuits for amplification, switching or signal processing, this product ensures seamless operation with its high DC current gain and maximum power dissipation. Trust in the quality of Onsemi to deliver cutting-edge technology that exceeds expectations. Elevate your projects to new heights with the MPSA42RL1G - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used and easily integrated into various electronic circuits.

Configuration: SINGLE

Simplified design and easy to use in circuits without the need for complex setups.

Maximum Power Dissipation (Abs): 1.5 W

Can handle relatively high power levels, suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 40

Provides sufficient gain for amplification purposes in various circuits.

Maximum Collector-Emitter Voltage: 300 V

Can withstand high voltage levels, making it versatile for different circuit requirements.

Maximum Collector Current (IC): 0.5 A

Can handle moderate current levels, suitable for many low to medium power applications.

Nominal Transition Frequency (fT): 50 MHz

Offers good frequency response for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA42RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA42RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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