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2N3904RL1G

Onsemi

2N3904RL1G by Onsemi

2N3904RL1G by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its single configuration and max. collector-emitter voltage of 40V.

Median Price

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Lifecycle Status

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9

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1k+

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Chip Stock

USA . 58,000 parts In-Stock

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Vyrian

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Bristol Electronics

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EPE Components Inc.

USA . 6,829 parts In-Stock

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Dark Horse Electronics

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EMSNET

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Semi Source

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Digiode

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Prism Electronics

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Aztec Data Supply Inc.

USA . 40 parts In-Stock

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$0.730

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40

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AZTECH Wire

Italy . 1,099 parts In-Stock

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$13.000

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Component Stockers USA

USA . 347 parts In-Stock

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$99.990

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Native Components

USA . 582 parts In-Stock

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Northwest PG Solutions

USA . 986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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TANS Electronics

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CPlus Electronics

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Problanco Electronics

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Kulean Microsystems

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SupplyDigital Components

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A-Z Elektronik GmbH

Germany . 2,400 parts In-Stock

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Glotronic Ltd.

UK . 1,970 parts In-Stock

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Corphita

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Corohmni

South Africa . 292 parts In-Stock

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UHIMA Technologies

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Overview

Enhance the performance of your electronic projects with the reliable 2N3904RL1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like this NPN transistor, perfect for switching applications. With a maximum power dissipation of 0.625W and a maximum operating temperature of 150 °C, this transistor offers exceptional durability and efficiency. Whether you're a hobbyist or a professional, this transistor's high DC current gain, low turn on/off time, and wide operating temperature range make it a versatile choice for various projects. Experience the value and benefits of Onsemi's 2N3904RL1G in your next design!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and offer good performance characteristics for such purposes.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in on/off operations.

Package Shape: ROUND

The round shape allows for easy mounting and installation in various electronic devices.

Maximum Power Dissipation (Abs): 0.625 W

With a high power dissipation capability, this transistor can handle moderate to high-power applications without overheating.

Maximum Collector-Emitter Voltage: 40 V

The high collector-emitter voltage rating provides a safety margin for voltage spikes and variations, ensuring reliable operation.

Nominal Transition Frequency (fT): 300 MHz

The high transition frequency indicates fast switching speeds, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3904RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3904RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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