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2N5088RLRAG

Onsemi

2N5088RLRAG by Onsemi

2N5088RLRAG by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 350, and max. collector-emitter voltage of 30V. Ideal for amplifier applications due to its high transition frequency of 50MHz and max. operating temp. of 150 °C in a cylindrical package style.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 42,000 parts In-Stock

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$0.040

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$0.040

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$0.040

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42,000

$0.040

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$0.040

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Chip Stock

USA . 72,000 parts In-Stock

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Vyrian

USA . 5,591 parts In-Stock

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Digiode

USA . 2,352 parts In-Stock

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AZTECH Wire

Italy . 1,198 parts In-Stock

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$17.640

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SupplyDigital Components

Austria . 6,347 parts In-Stock

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Problanco Electronics

Mexico . 4,540 parts In-Stock

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Kulean Microsystems

USA . 4,284 parts In-Stock

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TANS Electronics

Latvia . 3,132 parts In-Stock

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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Corphita

USA . 1,750 parts In-Stock

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Northwest PG Solutions

USA . 280 parts In-Stock

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$4.763

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Corohmni

South Africa . 256 parts In-Stock

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Native Components

USA . 32 parts In-Stock

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$4.714

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UHIMA Technologies

Türkiye . 12 parts In-Stock

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Overview

Unleash the power of the 2N5088RLRAG by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that guarantees unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for amplifier applications, offering superior functionality and efficiency. With its durable plastic/epoxy package and high DC current gain, this transistor ensures optimal performance in any project. Trust Onsemi to deliver cutting-edge technology and unparalleled quality with the 2N5088RLRAG, providing you with the value and benefits you need for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and helps protect the components inside the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes it easier to integrate into electronic devices.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and soldering, making it convenient for assembly and integration.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure connection and ease of soldering, making the transistor reliable in circuitry.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 350

A high minimum DC current gain ensures stable and consistent amplification in circuits, making it a reliable choice for amplifiers.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150 °C allows the transistor to function reliably in a variety of environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30V, this transistor is suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits, ensuring efficient operation.

Maximum Collector Current (IC): 0.05 A

The maximum collector current of 0.05A enables this transistor to handle moderate current levels in circuits.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes during assembly.

Nominal Transition Frequency (fT): 50 MHz

A high nominal transition frequency of 50MHz indicates the transistor's ability to switch quickly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N5088RLRAG attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5088RLRAG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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