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2N3906RL1G

Onsemi

2N3906RL1G by Onsemi

2N3906RL1G by Onsemi is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 30, and max. collector-emitter voltage of 40V. Ideal for switching applications due to its single configuration and cylindrical package style. Operating temp ranges from -55 °C to 150°C, making it versatile in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 8,128 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,688 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,925 parts In-Stock

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1,925

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Rebound Electronics

UK . 1,500 parts In-Stock

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Digiode

USA . 1,168 parts In-Stock

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Bristol Electronics

USA . 170 parts In-Stock

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$1.397

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$1.271

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$1.146

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70

$1.397

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$1.146

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Corohmni

South Africa . 120 parts In-Stock

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$1.996

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120

$1.996

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Northwest PG Solutions

USA . 433 parts In-Stock

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$3.256

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$3.256

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AZTECH Wire

Italy . 1,116 parts In-Stock

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$8.510

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$8.510

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Component Stockers USA

USA . 715 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 17,406 parts In-Stock

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SupplyDigital Components

Austria . 6,855 parts In-Stock

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Kulean Microsystems

USA . 6,426 parts In-Stock

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TANS Electronics

Latvia . 4,925 parts In-Stock

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Perfect Parts

USA . 4,312 parts In-Stock

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Corphita

USA . 2,288 parts In-Stock

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Problanco Electronics

Mexico . 2,110 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 1,925 parts In-Stock

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Glotronic Ltd.

UK . 1,540 parts In-Stock

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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640

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Native Components

USA . 608 parts In-Stock

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$2.871

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608

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$2.871

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Overview

Upgrade your electronic projects with the high-quality 2N3906RL1G by Onsemi! As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors that are perfect for switching applications. With a PNP configuration and a maximum collector-emitter voltage of 40V, this transistor offers reliable performance and efficiency. Whether you're a hobbyist or a professional, the 2N3906RL1G provides exceptional value and benefits for all your electronic needs. Experience the advantages of Onsemi's superior products today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components of the transistor and ensures durability.

Polarity or Channel Type: PNP

Suitable for applications that require PNP transistors, ensuring compatibility.

Configuration: SINGLE

Simplifies circuit design and implementation with a single transistor.

Transistor Application: SWITCHING

Well-suited for switching applications, providing reliable performance in such scenarios.

Package Shape: ROUND

Easily fits into round package designs, offering flexibility in layout.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering and PCB mounting, enhancing the assembly process.

No. of Terminals: 3

Simple and standard pin configuration, making it easy to integrate into circuits.

Maximum Power Dissipation (Abs): 0.35 W

Adequate power handling capability for the intended applications, ensuring stable operation.

Package Style (Meter): CYLINDRICAL

Offers a compact and cylindrical form factor, suitable for space-constrained designs.

Minimum DC Current Gain (hFE): 30

Provides sufficient current gain for amplification and switching functions.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, ensuring reliability in demanding environments.

Maximum Collector-Emitter Voltage: 40 V

Supports a wide range of voltage requirements in various applications.

Transistor Element Material: SILICON

Enhances the performance and reliability of the transistor due to the semiconductor material used.

Maximum Turn On Time (ton): 70 ns

Fast turn-on time for quick switching operations, improving overall efficiency.

Minimum Operating Temperature: -55 °C

Operates reliably in low-temperature conditions, making it suitable for a wide range of environments.

Maximum Collector Current (IC): 0.2 A

Supports moderate current levels, suitable for various types of applications.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time for efficient switching transitions and reduced power dissipation.

Terminal Finish: TIN SILVER COPPER

Provides good conductivity and corrosion resistance for reliable electrical connections.

Terminal Position: BOTTOM

Facilitates easy PCB mounting and soldering, ensuring proper alignment in the assembly process.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures during soldering, ensuring component reliability.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for high-speed switching applications, ensuring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3906RL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3906RL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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