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MPSA92ZL1G

Onsemi

MPSA92ZL1G by Onsemi

MPSA92ZL1G by Onsemi is a PNP BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 1.5W. The through-hole package with bottom terminal position makes it easy to integrate into circuit designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 76,000 parts In-Stock

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Vyrian

USA . 11,847 parts In-Stock

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ComSIT USA

USA . 8,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 5,602 parts In-Stock

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Digiode

USA . 1,133 parts In-Stock

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Connector Distribution Corp

USA . 1,000 parts In-Stock

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Right Parts Inc.

USA . 1,000 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 129 parts In-Stock

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$12.910

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QUARKTWIN TECHNOLOGY LTD

USA . 26,678 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 5,590 parts In-Stock

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Problanco Electronics

Mexico . 5,479 parts In-Stock

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SupplyDigital Components

Austria . 5,254 parts In-Stock

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TANS Electronics

Latvia . 3,334 parts In-Stock

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Authorized Procurement Solutions

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Corphita

USA . 1,414 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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Corohmni

South Africa . 185 parts In-Stock

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Overview

Unleash the power of innovation with the MPSA92ZL1G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This PNP Small Signal Bipolar Junction Transistor is a game-changer, offering seamless performance in a variety of applications. From amplification to switching, this product delivers unparalleled value and benefits to customers. Don't settle for less when you can experience the advantages of the MPSA92ZL1G today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and mechanical strength, ensuring durability and reliability.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to use in a wide range of applications.

Package Shape: ROUND

Round package shape facilitates easy mounting and handling during assembly, enhancing usability.

Maximum Power Dissipation (Abs): 1.5 W

High power dissipation capability allows the transistor to handle moderate power levels without overheating.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding thermal conditions.

Maximum Collector-Emitter Voltage: 300 V

High voltage rating provides flexibility in designing circuits that require higher voltage levels.

Transistor Element Material: SILICON

Silicon is a common material for transistors, offering good semiconductor properties for efficient operation.

Maximum Collector Current (IC): 0.5 A

Adequate collector current rating allows the transistor to handle moderate current levels in various applications.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency indicates good high-frequency performance for signal amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA92ZL1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA92ZL1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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