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CPH3121-TL-E

Onsemi

CPH3121-TL-E by Onsemi

CPH3121-TL-E by Onsemi is a PNP BJT transistor with max power dissipation of 0.9W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its high operating temp of 150 °C and peak reflow temp of 260°C within 30s.

Median Price

$0.168

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 57,000 parts In-Stock

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-

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$0.168

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$0.140

10k+ parts

$0.124

57,000

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$0.168

$0.140

$0.124

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Digiode

USA . 2,102 parts In-Stock

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$0.152

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2,102

$0.152

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Chip Stock

USA . 53,000 parts In-Stock

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Vyrian

USA . 11,218 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,696 parts In-Stock

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$0.144

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1,696

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Corohmni

South Africa . 216 parts In-Stock

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$0.160

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Native Components

USA . 45 parts In-Stock

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$1.590

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45

$1.590

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Northwest PG Solutions

USA . 1,746 parts In-Stock

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$1.749

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$1.749

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AZTECH Wire

Italy . 259 parts In-Stock

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$10.830

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SupplyDigital Components

Austria . 7,490 parts In-Stock

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Kulean Microsystems

USA . 6,591 parts In-Stock

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Problanco Electronics

Mexico . 6,567 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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UHIMA Technologies

Türkiye . 834 parts In-Stock

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TANS Electronics

Latvia . 183 parts In-Stock

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Overview

Unleash the power of innovation with the CPH3121-TL-E by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi delivers unparalleled quality and reliability in every product. The PNP configuration and maximum collector current of 3A make this transistor ideal for a wide range of applications. From amplifiers to switching circuits, this versatile component offers exceptional performance and efficiency. Trust Onsemi to provide cutting-edge solutions that elevate your projects to the next level.

Feature Benefit Bullets

Polarity/Channel Type: PNP

PNP transistors are commonly used for high-speed switching applications, making this product suitable for applications requiring fast response times.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to integrate into electronic systems.

Surface Mount: YES

Surface mount packaging allows for easy installation on printed circuit boards, saving space and improving overall circuit reliability.

Maximum Power Dissipation: 0.9 W

With a maximum power dissipation of 0.9 W, this transistor can handle moderate power levels, making it suitable for a wide range of applications.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures stable and reliable amplification, making this transistor ideal for signal processing applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can operate in high-temperature environments, increasing its versatility.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows this transistor to handle higher current loads, making it suitable for power switching applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish provides good solderability and reliability, ensuring the durability of the product over time.

Maximum Time At Peak Reflow Temperature: 30s

A maximum time of 30 seconds at peak reflow temperature allows for easy and efficient soldering during assembly, reducing production time and costs.

Peak Reflow Temperature: 260 °C

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring proper solder joints and reliable performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3121-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

CPH3121-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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