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CPH3109-TL-E

Onsemi

CPH3109-TL-E by Onsemi

CPH3109-TL-E by Onsemi is a PNP BJT transistor for switching applications. It has hFE of 200, VCE of 30V, and IC of 3A. With fT at 380MHz, this Gull Wing terminal transistor is ideal for high-frequency small outline packages.

Median Price

$0.217

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,525 parts In-Stock

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$0.275

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2,525

$0.275

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Rochester

USA . 63,000 parts In-Stock

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-

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$0.217

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$0.180

10k+ parts

$0.161

63,000

-

$0.217

$0.180

$0.161

Verical

USA . 33,000 parts In-Stock

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$0.201

33,000

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$0.201

Farnell

UK . 18,000 parts In-Stock

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$0.176

18,000

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$0.176

DigiKey

USA . 17,136 parts In-Stock

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$0.270

17,136

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$0.270

Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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3,000

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Chip1Stop

Japan . 2,546 parts In-Stock

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2,546

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Distributors (In-Stock)

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Vyrian

USA . 345 parts In-Stock

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$0.176

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345

$0.176

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Digiode

USA . 1,047 parts In-Stock

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$0.178

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1,047

$0.178

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Bristol Electronics

USA . 2,563 parts In-Stock

1+ parts

$0.710

100+ parts

$0.263

1k+ parts

$0.184

10k+ parts

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2,563

$0.710

$0.263

$0.184

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Chip Stock

USA . 80,000 parts In-Stock

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DigiKey Marketplace

USA . 18,000 parts In-Stock

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Flip Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 2,563 parts In-Stock

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2,563

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Distributors (Availability)

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Corphita

USA . 130 parts In-Stock

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$0.168

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130

$0.168

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Corohmni

South Africa . 201 parts In-Stock

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$0.176

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201

$0.176

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Native Components

USA . 242 parts In-Stock

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$152.170

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$146.083

242

$152.170

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$146.083

Northwest PG Solutions

USA . 340 parts In-Stock

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$167.387

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340

$167.387

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Continental Prestige Electronics

USA . 63,000 parts In-Stock

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$0.176

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63,000

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$0.176

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Authorized Procurement Solutions

USA . 32,000 parts In-Stock

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Kulean Microsystems

USA . 5,922 parts In-Stock

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SupplyDigital Components

Austria . 5,532 parts In-Stock

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Perfect Parts

USA . 4,651 parts In-Stock

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Kepictronics

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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TANS Electronics

Latvia . 2,339 parts In-Stock

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Problanco Electronics

Mexico . 918 parts In-Stock

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UHIMA Technologies

Türkiye . 366 parts In-Stock

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366

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Overview

Enhance your electronic projects with the CPH3109-TL-E by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. With its PNP configuration and switching capabilities, this transistor is perfect for a variety of applications. Manufactured by Onsemi, known for their reliable and high-performing components, this transistor offers unmatched value and benefits to customers. Experience seamless integration with its surface mount design, high DC current gain, and maximum collector-emitter voltage of 30V. Upgrade your designs today with the CPH3109-TL-E and unleash the full potential of your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy body material ensures durability and protects the transistor from external elements, making it suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and offer high efficiency in controlling current flow, making this transistor a good choice for switching circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance and efficient control of current flow.

Surface Mount: YES

Surface mount capability enables easy and space-saving integration onto PCBs, ideal for compact electronic devices.

Package Shape: RECTANGULAR

Rectangular package shape offers efficient use of space on PCBs and allows for easy placement and soldering.

No. of Terminals: 3

Three terminals provide simple connectivity and compatibility with various circuit designs.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures stable and consistent amplification of current signals in the circuit.

Maximum Collector-Emitter Voltage: 30 V

With a maximum collector-emitter voltage of 30 V, this transistor can handle higher voltage levels, making it suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and durability, ensuring long-term functionality of the transistor.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3 A, this transistor can handle higher current levels, making it suitable for applications requiring higher power.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for easy and secure connection to external components.

Nominal Transition Frequency (fT): 380 MHz

High nominal transition frequency enables fast switching speeds and high-frequency operation, making it suitable for applications requiring quick response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3109-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3109-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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