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CPH3123-TL-E

Onsemi

CPH3123-TL-E by Onsemi

CPH3123-TL-E by Onsemi is a PNP BJT transistor with hFE of 200, VCE of 50V, and IC of 3A. Ideal for switching applications due to its high transition frequency of 390MHz. This surface-mount device in a small outline package is suitable for compact electronic designs.

Median Price

$0.156

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 62,010 parts In-Stock

1+ parts

-

100+ parts

$0.168

1k+ parts

$0.140

10k+ parts

$0.124

62,010

-

$0.168

$0.140

$0.124

DigiKey

USA . 62,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.210

62,010

-

-

-

$0.210

Farnell

UK . 62,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.156

62,010

-

-

-

$0.156

Verical

USA . 62,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.155

62,010

-

-

-

$0.155

Flip Electronics (Authorized)

USA . 18,000 parts In-Stock

1+ parts

-

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-

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18,000

-

-

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Mouser Electronics

USA . 2,172 parts In-Stock

1+ parts

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100+ parts

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$0.136

2,172

-

-

-

$0.136

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,015 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

-

10k+ parts

-

2,015

$0.136

-

-

-

Digiode

USA . 892 parts In-Stock

1+ parts

$0.137

100+ parts

-

1k+ parts

-

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892

$0.137

-

-

-

Chip Stock

USA . 68,000 parts In-Stock

1+ parts

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68,000

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DigiKey Marketplace

USA . 62,010 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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62,010

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-

-

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Flip Electronics

USA . 18,000 parts In-Stock

1+ parts

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100+ parts

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18,000

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,000 parts In-Stock

1+ parts

$0.130

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

$0.130

-

-

-

Corohmni

South Africa . 374 parts In-Stock

1+ parts

$0.136

100+ parts

-

1k+ parts

-

10k+ parts

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374

$0.136

-

-

-

Native Components

USA . 980 parts In-Stock

1+ parts

$5.010

100+ parts

-

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980

$5.010

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-

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

1+ parts

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90,000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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30,000

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Kepictronics

USA . 18,000 parts In-Stock

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18,000

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QUARKTWIN TECHNOLOGY LTD

USA . 17,743 parts In-Stock

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17,743

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Kulean Microsystems

USA . 7,680 parts In-Stock

1+ parts

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7,680

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-

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TANS Electronics

Latvia . 7,100 parts In-Stock

1+ parts

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100+ parts

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7,100

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-

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SupplyDigital Components

Austria . 5,015 parts In-Stock

1+ parts

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5,015

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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3,790

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Continental Prestige Electronics

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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$0.123

10k+ parts

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3,000

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-

$0.123

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Problanco Electronics

Mexico . 2,006 parts In-Stock

1+ parts

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100+ parts

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2,006

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UHIMA Technologies

Türkiye . 419 parts In-Stock

1+ parts

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419

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Northwest PG Solutions

USA . 153 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.910

10k+ parts

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153

-

-

$4.910

-

Overview

Looking for a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers exceptional performance and reliability? Look no further than the CPH3123-TL-E by Onsemi. With a maximum collector-emitter voltage of 50 V and a nominal transition frequency of 390 MHz, this PNP transistor is perfect for switching applications. Its compact package shape and gull wing terminal form make it easy to install, while its minimum DC current gain of 200 ensures efficiency in operation. Trust Onsemi's expertise and innovation to deliver cutting-edge technology with the CPH3123-TL-E, providing unmatched value and benefits to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides excellent protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, providing flexibility in circuit design.

Configuration: SINGLE

Simplified circuit design with a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easily mountable on a PCB, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Compact shape for efficient use of PCB real estate.

Terminal Form: GULL WING

Easy to solder onto the PCB, ensuring good mechanical and electrical connection.

No. of Terminals: 3

Simple connection with only three terminals, reducing complexity in circuit layout.

Package Style (Meter): SMALL OUTLINE

Space-saving design ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 200

Consistent and reliable amplification of current signals.

Maximum Collector-Emitter Voltage: 50 V

Able to handle relatively high voltage levels, suitable for various applications.

Transistor Element Material: SILICON

High-quality material known for its excellent electrical properties and reliability.

Maximum Collector Current (IC): 3 A

Capable of handling high current loads, making it suitable for power applications.

Terminal Position: DUAL

Provides flexibility in component orientation and layout on the PCB.

Nominal Transition Frequency (fT): 390 MHz

Capable of high-frequency operation, suitable for demanding applications that require fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3123-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3123-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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