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CPH3101-TL-E

Onsemi

CPH3101-TL-E by Onsemi

CPH3101-TL-E by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 200, Vce of 30V, and IC of 2A. With a fT of 150MHz, it's ideal for small outline packages in surface mount configurations.

Median Price

$0.142

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

$0.147

1k+ parts

$0.122

10k+ parts

$0.109

45,000

-

$0.147

$0.122

$0.109

DigiKey

USA . 45,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.180

45,000

-

-

-

$0.180

Flip Electronics (Authorized)

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Farnell

UK . 39,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.118

39,000

-

-

-

$0.118

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.136

12,000

-

-

-

$0.136

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,330 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

10k+ parts

-

1,330

$0.110

-

-

-

Digiode

USA . 2,295 parts In-Stock

1+ parts

$0.121

100+ parts

-

1k+ parts

-

10k+ parts

-

2,295

$0.121

-

-

-

Flip Electronics

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

DigiKey Marketplace

USA . 42,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42,000

-

-

-

-

Chip Stock

USA . 34,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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34,000

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 123 parts In-Stock

1+ parts

$0.110

100+ parts

-

1k+ parts

-

10k+ parts

-

123

$0.110

-

-

-

Corphita

USA . 1,980 parts In-Stock

1+ parts

$0.114

100+ parts

-

1k+ parts

-

10k+ parts

-

1,980

$0.114

-

-

-

Native Components

USA . 969 parts In-Stock

1+ parts

$8.710

100+ parts

-

1k+ parts

-

10k+ parts

-

969

$8.710

-

-

-

Northwest PG Solutions

USA . 704 parts In-Stock

1+ parts

$9.581

100+ parts

$8.623

1k+ parts

-

10k+ parts

-

704

$9.581

$8.623

-

-

Continental Prestige Electronics

USA . 33,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.118

10k+ parts

-

33,000

-

-

$0.118

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TANS Electronics

Latvia . 6,910 parts In-Stock

1+ parts

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6,910

-

-

-

-

Problanco Electronics

Mexico . 5,437 parts In-Stock

1+ parts

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5,437

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-

-

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SupplyDigital Components

Austria . 3,833 parts In-Stock

1+ parts

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100+ parts

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3,833

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-

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Kepictronics

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

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3,000

-

-

-

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Kulean Microsystems

USA . 1,670 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,670

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-

-

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UHIMA Technologies

Türkiye . 752 parts In-Stock

1+ parts

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100+ parts

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752

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-

Overview

Elevate your electronics with the CPH3101-TL-E by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their superior products, this PNP transistor offers customers reliability and performance. With a maximum collector-emitter voltage of 30V and a minimum DC current gain of 200, this transistor provides efficient and effective operation. Whether you're working on consumer electronics or industrial machinery, the CPH3101-TL-E delivers value, benefits, and advantages that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for different circuit designs.

Configuration: SINGLE

Simplified design with a single transistor configuration for easier integration into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy and compact PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape provides more efficient use of space on the PCB.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and more reliable during assembly.

No. of Terminals: 3

Simple 3-terminal design for easier connection in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space and allows for higher component density on the PCB.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and predictable transistor operation.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low voltage applications, providing protection against excessive voltage.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability for the transistor element.

Maximum Collector Current (IC): 2 A

High collector current rating allows for handling of higher currents in circuits.

Terminal Finish: TIN BISMUTH

Tin bismuth finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position for flexible mounting and connection options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for quick and efficient soldering during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance for reliable soldering process.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency for fast switching speeds in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3101-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

CPH3101-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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