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CPH3116-TL-E

Onsemi

CPH3116-TL-E by Onsemi

CPH3116-TL-E by Onsemi is a PNP BJT transistor with 200 min hFE, 50V VCE, and 420MHz fT. Ideal for switching applications, it has a single configuration in a small outline package with Gull Wing terminals. This surface-mount device offers fast turn-on/off times of 35ns/200ns for efficient performance.

Median Price

$0.264

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,876 parts In-Stock

1+ parts

$0.700

100+ parts

$0.277

1k+ parts

$0.188

10k+ parts

$0.135

1,876

$0.700

$0.277

$0.188

$0.135

DigiKey

USA . 228 parts In-Stock

1+ parts

$0.700

100+ parts

$0.277

1k+ parts

$0.188

10k+ parts

-

228

$0.700

$0.277

$0.188

-

Farnell

UK . 3,520 parts In-Stock

1+ parts

-

100+ parts

$0.221

1k+ parts

$0.151

10k+ parts

$0.126

3,520

-

$0.221

$0.151

$0.126

Element14

Singapore . 3,520 parts In-Stock

1+ parts

-

100+ parts

$0.378

1k+ parts

$0.215

10k+ parts

$0.194

3,520

-

$0.378

$0.215

$0.194

Arrow

USA . 3,000 parts In-Stock

1+ parts

-

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$0.105

3,000

-

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$0.105

Verical

USA . 2,760 parts In-Stock

1+ parts

-

100+ parts

$0.247

1k+ parts

$0.165

10k+ parts

$0.118

2,760

-

$0.247

$0.165

$0.118

Chip1Stop

Japan . 2,760 parts In-Stock

1+ parts

-

100+ parts

$0.260

1k+ parts

$0.183

10k+ parts

$0.162

2,760

-

$0.260

$0.183

$0.162

Newark

USA . 2,327 parts In-Stock

1+ parts

-

100+ parts

$0.269

1k+ parts

$0.219

10k+ parts

-

2,327

-

$0.269

$0.219

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Distributors (In-Stock)

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Vyrian

USA . 2,050 parts In-Stock

1+ parts

$0.120

100+ parts

-

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2,050

$0.120

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-

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Digiode

USA . 2,346 parts In-Stock

1+ parts

$0.466

100+ parts

-

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2,346

$0.466

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Flip Electronics

USA . 27,000 parts In-Stock

1+ parts

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27,000

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NAC Semi

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

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$0.292

12,000

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-

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$0.292

Chip Stock

USA . 5,494 parts In-Stock

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5,494

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Distributors (Availability)

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Corohmni

South Africa . 156 parts In-Stock

1+ parts

$0.120

100+ parts

-

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156

$0.120

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Corphita

USA . 1,265 parts In-Stock

1+ parts

$0.441

100+ parts

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1,265

$0.441

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 26,458 parts In-Stock

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26,458

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Lixinc

USA . 14,851 parts In-Stock

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Kepictronics

USA . 8,871 parts In-Stock

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8,871

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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QUARKTWIN TECHNOLOGY LTD

USA . 6,664 parts In-Stock

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6,664

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Eastek

USA . 6,000 parts In-Stock

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Kulean Microsystems

USA . 5,321 parts In-Stock

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5,321

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Problanco Electronics

Mexico . 3,970 parts In-Stock

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3,970

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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TANS Electronics

Latvia . 2,422 parts In-Stock

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Northwest PG Solutions

USA . 1,725 parts In-Stock

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1,725

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Native Components

USA . 863 parts In-Stock

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SupplyDigital Components

Austria . 817 parts In-Stock

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817

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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219

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Overview

Elevate your electronic designs with the CPH3116-TL-E by Onsemi, a top-tier manufacturer known for their quality and reliability. This PNP Small Signal Bipolar Junction Transistor is perfect for switching applications, offering a seamless performance that exceeds expectations. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 420 MHz, this transistor delivers superior functionality. Trust Onsemi to provide you with cutting-edge technology that will take your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuits and provides efficient performance in switching applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast turn-on and turn-off times, making it ideal for high-speed switching circuits.

Surface Mount: YES

Being surface mount compatible enhances ease of assembly and provides space-saving benefits for compact circuit board designs.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient placement on circuit boards and ensures a secure fit during assembly.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor provides consistent and reliable amplification capabilities in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50 V allows for versatile use in a wide range of voltage applications.

Transistor Element Material: SILICON

The silicon transistor element material offers high performance, stability, and reliability for long-term usage in electronic circuits.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time of 35 ns ensures rapid switching operation, reducing power losses and enhancing overall efficiency.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle high current loads, making it suitable for power applications.

Maximum Turn Off Time (toff): 200 ns

The maximum turn-off time of 200 ns ensures efficient switching performance and minimizes switching losses in high-speed applications.

Terminal Finish: TIN BISMUTH

The terminal finish of tin bismuth provides excellent solderability and ensures reliable connections during assembly.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layout and provides ease of connectivity in various electronic designs.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and prevents damage to the transistor during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for reliable and robust soldering of the transistor to the circuit board.

Nominal Transition Frequency (fT): 420 MHz

The high nominal transition frequency of 420 MHz indicates fast response times and high-frequency operation, making it suitable for demanding RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) CPH3116-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

200 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

CPH3116-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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